Theoretical and experimental study on responsivity of ultra-fast X-ray semiconductor chip based on the rad-optic effect
文献类型：期刊论文
| 作者 | Yan, Xin1,2 ; Wang, Tao1; Wang, Gang1; Yao, Dong1,2; Liu, Yiheng1; Gao, Guilong1; Xin, Liwei1,2; Yin, Fei1; Tian, Jinshou1; Chang, Xinlong2
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| 刊名 | Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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| 出版日期 | 2023-04 |
| 卷号 | 1049 |
| ISSN号 | 01689002 |
| 关键词 | X-ray detector Rad-optic effect Ultrafast response semiconductor material Responsivity Ultrafast measurements |
| DOI | 10.1016/j.nima.2023.168070 |
| 产权排序 | 1 |
| 英文摘要 | Semiconductor sensors based on the rad-optic effect enable ultra-fast detection of X-rays and play an important role in fusion diagnostics. Obtaining the responsivity of the semiconductor ultrafast response material is an important part of characterization. In this work, the refractive index change mechanism of the semiconductor under X-ray irradiation was analyzed, and the quantitative relationship between the diffraction efficiency and the X-ray photon energy was established through the LT-AlGaAs diffraction imaging experiments. The impulse responses of LT-AlGaAs under 1 keV–10 keV X-ray radiation were calculated, revealing the variation of responsivity with radiated photon energy. Imaging experiments of LT-AlGaAs were performed by bombarding an Al target to generate 1.5 keV X-rays. The diffraction images were obtained in agreement with the simulations. The responsivity of the semiconductor chip increases with the square of the incident X-ray power density. This study provides meaningful analyses for the development of ultra-fast X-ray imaging systems based on the rad-optic effect. © 2023 Elsevier B.V. |
| 语种 | 英语 |
| 出版者 | Elsevier B.V. |
| 源URL | [http://ir.opt.ac.cn/handle/181661/96333]  |
| 专题 | 条纹相机工程中心 |
| 作者单位 | 1.Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology, Xi'an Institute of Optics and Precision Mechanics (XIOPM), Chinese Academy of Sciences (CAS), Shaanxi, Xi'an; 710119, China 2.Rocket Force University of Engineering, Xi'an; 710025, China; |
| 推荐引用方式 GB/T 7714 | Yan, Xin,Wang, Tao,Wang, Gang,et al. Theoretical and experimental study on responsivity of ultra-fast X-ray semiconductor chip based on the rad-optic effect[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment,2023,1049. |
| APA | Yan, Xin.,Wang, Tao.,Wang, Gang.,Yao, Dong.,Liu, Yiheng.,...&He, Kai.(2023).Theoretical and experimental study on responsivity of ultra-fast X-ray semiconductor chip based on the rad-optic effect.Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment,1049. |
| MLA | Yan, Xin,et al."Theoretical and experimental study on responsivity of ultra-fast X-ray semiconductor chip based on the rad-optic effect".Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 1049(2023). |
入库方式： OAI收割
来源：西安光学精密机械研究所
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