Controllable Ga/Ga2O3 Nanowire Growth at High Temperatures Enabled by Au and Pd Quantum Dot Catalysts
文献类型：期刊论文
| 作者 | Wang, Hang1,2; Yang, Jiawei3; Wang, Anqi2; Wang, Ying4; Han, Ning1; Yang, Jun2; Chen, Yunfa2 |
| 刊名 | CRYSTAL GROWTH & DESIGN
 |
| 出版日期 | 2022-09-15 |
| 页码 | 7 |
| ISSN号 | 1528-7483 |
| DOI | 10.1021/acs.cgd.2c00752 |
| 英文摘要 | Though Ga has increasing roles such as electrocatalytic reduction of CO2 and its one-dimensional structure can provide an effective electron pathway, it is challenging to synthesize Ga nanowires (NWs) due to its low melting point (29.7 degrees C). In this study, single-crystalline Ga/Ga2O3 NWs are synthesized by chemical vapor deposition at 650 degrees C by using Au and Pd quantum dots (QDs) as catalysts and GaSb as the Ga source. The results show that the growth of Ga/Ga2O3 NWs is dependent on the size of the QDs, where smaller Au (2.7-3.8 nm) and Pd (1.9-3.6 nm) favor Ga/Ga2O3 NW growth, while larger Au (7.1 nm) and Pd (8.9 nm) lead to more GaSb NW growth. Further, the <110>- and <100>-oriented NWs are preferentially grown by the Au and Pd catalysts. The Ga/Ga2O3 NWs have a thin surface oxide layer, which is verified by X-ray photoelectron spectroscopy, which also accounts for the Schottky contact of the Ga/Ga2O3 NWs with Ni electrodes. The Ga/Ga2O3 NWs persist the single-crystalline phase to at least 400 degrees C by in situ transmittance electron microscopy observation, and the NW shape breaks until 950 degrees C by annealing in air. |
| WOS关键词 | OPTICAL-PROPERTIES ; NANOPARTICLES ; TRANSPARENT ; FILMS |
| 资助项目 | National Natural Science Foundation of China[51602314] ; National Natural Science Foundation of China[61504151] |
| WOS研究方向 | Chemistry ; Crystallography ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000861771600001 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://ir.ipe.ac.cn/handle/122111/54869]  |
| 专题 | 中国科学院过程工程研究所 |
| 通讯作者 | Han, Ning; Yang, Jun; Chen, Yunfa |
| 作者单位 | 1.Xian Univ Architecture & Technol, Sch Met Engn, Xian 710055, Peoples R China 2.Chinese Acad Sci, State Key Lab Multiphase Complex Syst, Inst Proc Engn, Beijing 100190, Peoples R China 3.Tsinghua Univ, Future Lab, Beijing 100084, Peoples R China 4.Beijing Jiaotong Univ, Sch Sci, Dept Phys, Beijing 100044, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Hang,Yang, Jiawei,Wang, Anqi,et al. Controllable Ga/Ga2O3 Nanowire Growth at High Temperatures Enabled by Au and Pd Quantum Dot Catalysts[J]. CRYSTAL GROWTH & DESIGN,2022:7. |
| APA | Wang, Hang.,Yang, Jiawei.,Wang, Anqi.,Wang, Ying.,Han, Ning.,...&Chen, Yunfa.(2022).Controllable Ga/Ga2O3 Nanowire Growth at High Temperatures Enabled by Au and Pd Quantum Dot Catalysts.CRYSTAL GROWTH & DESIGN,7. |
| MLA | Wang, Hang,et al."Controllable Ga/Ga2O3 Nanowire Growth at High Temperatures Enabled by Au and Pd Quantum Dot Catalysts".CRYSTAL GROWTH & DESIGN (2022):7. |
入库方式： OAI收割
来源：过程工程研究所
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