中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Pressure-induced coupled structural-electronic transition in SnS2 under different hydrostatic environments up to 39.7 GPa

文献类型:期刊论文

作者Xinyu Zhang; Lidong Dai; Haiying Hu; Meiling Hong; Chuang Li
刊名Rsc Advances
出版日期2022
卷号12期号:4页码:2454-2461
DOI10.1039/D1RA08632D
英文摘要

A series of in situ high-pressure Raman spectroscopy and electrical conductivity experiments have been performed to investigate the vibrational and electrical transport properties of SnS 2 under non-hydrostatic and hydrostatic environments. Upon compression, an coupled structural–electronic transition in SnS 2 occurred at 30.2 GPa under non-hydrostatic conditions, which was evidenced by the splitting of the E g mode and the discontinuities in Raman shifts, Raman full width at half maximum (FWHM) and electrical conductivity. However, the coupled structural–electronic transition took place at a higher pressure of 33.4 GPa under hydrostatic conditions, which may be due to the influence of the pressure medium. Furthermore, our first-principles theoretical calculations results revealed that the bandgap energy of SnS 2 decreased slowly with increasing pressure and it closed in the pressure range of 30–40 GPa, which agreed well with our Raman spectroscopy and electrical conductivity results. Upon decompression, the recoverable Raman peaks and electrical conductivity indicated that the coupled structural–electronic transition was reversible, which was further confirmed by our HRTEM observations.

语种英语
源URL[http://ir.gyig.ac.cn/handle/42920512-1/13488]  
专题地球化学研究所_地球内部物质高温高压实验室
作者单位1.Key Laboratory of High-temperature and High-pressure Study of the Earth's Interior, Institute of Geochemistry, Chinese Academy of Sciences, Guiyang, Guizhou 550081, China
2.University of Chinese Academy of Sciences, Beijing 100049, China
推荐引用方式
GB/T 7714
Xinyu Zhang,Lidong Dai,Haiying Hu,et al. Pressure-induced coupled structural-electronic transition in SnS2 under different hydrostatic environments up to 39.7 GPa[J]. Rsc Advances,2022,12(4):2454-2461.
APA Xinyu Zhang,Lidong Dai,Haiying Hu,Meiling Hong,&Chuang Li.(2022).Pressure-induced coupled structural-electronic transition in SnS2 under different hydrostatic environments up to 39.7 GPa.Rsc Advances,12(4),2454-2461.
MLA Xinyu Zhang,et al."Pressure-induced coupled structural-electronic transition in SnS2 under different hydrostatic environments up to 39.7 GPa".Rsc Advances 12.4(2022):2454-2461.

入库方式: OAI收割

来源:地球化学研究所

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