Die Bonding of High Power 808 nm Laser Diodes With Nanosilver Paste
文献类型：期刊论文
| 作者 | Yan, Yi1; Chen, Xu1; Liu, Xingsheng2,3; Mei, Yunhui4; Lu, Guo-Quan4,5 |
| 刊名 | journal of electronic packaging
 |
| 出版日期 | 2012-12-01 |
| 卷号 | 134期号:4页码:041003 |
| 关键词 | nanosilver paste laser diodes die bonding |
| ISSN号 | 1043-7398 |
| 产权排序 | 2 |
| 合作状况 | 国际 |
| 中文摘要 | conduction-cooled high power laser diodes have a variety of significant commercial, industrial, and military applications. for these devices to perform effectively, an appropriate die-attached material meeting specific requirements must be selected. in this study, nanosilver paste, a novel die-attached material, was used in packaging the 60 w 808 nm high power laser diodes. the properties of the laserdiodes operating in the continuous wave (cw) mode, including the characteristics of power-current-voltage (liv), spectrum, near field, far field, near field linearity, spatial spectrum, and thermal impedance, were determined. in addition, destructive tests, including the die shear test, scanning acoustic microscopy, and the thermal rollover test, were conducted to evaluate the reliability of the die bonding ofthe 60 w 808 nm high power semiconductor laser with nanosilver paste. thermal analyses of the laserdiodes operating at cw mode with different die-attached materials, indium solder, gold-tin solder andnanosilver paste, were conducted by finite element analysis (fea). according to the result of the fea, thenanosilver paste resulted in the lowest temperature in the laser diodes. the test results showed that thenanosilver paste was a very promising die-attached material in packaging high power semiconductorlaser. |
| 英文摘要 | conduction-cooled high power laser diodes have a variety of significant commercial, industrial, and military applications. for these devices to perform effectively, an appropriate die-attached material meeting specific requirements must be selected. in this study, nanosilver paste, a novel die-attached material, was used in packaging the 60 w 808 nm high power laser diodes. the properties of the laser diodes operating in the continuous wave (cw) mode, including the characteristics of power-current-voltage (liv), spectrum, near field, far field, near field linearity, spatial spectrum, and thermal impedance, were determined. in addition, destructive tests, including the die shear test, scanning acoustic microscopy, and the thermal rollover test, were conducted to evaluate the reliability of the die bonding of the 60 w 808 nm high power semiconductor laser with nanosilver paste. thermal analyses of the laser diodes operating at cw mode with different die-attached materials, indium solder, gold-tin solder and nanosilver paste, were conducted by finite element analysis (fea). according to the result of the fea, the nanosilver paste resulted in the lowest temperature in the laser diodes. the test results showed that the nanosilver paste was a very promising die-attached material in packaging high power semiconductor laser. [doi: 10.1115/1.4007271] |
| WOS标题词 | science & technology ; technology |
| 类目[WOS] | engineering, electrical & electronic ; engineering, mechanical |
| 研究领域[WOS] | engineering |
| 关键词[WOS] | attach materials ; silver paste ; arrays |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000313031000003 |
| 公开日期 | 2013-10-11 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/20938]  |
| 专题 | 西安光学精密机械研究所_炬光科技有限公司 |
| 作者单位 | 1.Tianjin Univ, Sch Chem Engn & Technol, Tianjin 300072, Peoples R China 2.Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, Xian 710119, Shaanxi, Peoples R China 3.Xian Focuslight Technol Co Ltd, Xian 710119, Shanxi, Peoples R China 4.Tianjin Univ, Sch Mat Sci & Engn, Tianjin Key Lab Adv Joining Technol, Tianjin 710119, Peoples R China 5.Virginia Tech, Dept Mat Sci & Engn, Blacksburg, VA 24061 USA |
| 推荐引用方式 GB/T 7714 | Yan, Yi,Chen, Xu,Liu, Xingsheng,et al. Die Bonding of High Power 808 nm Laser Diodes With Nanosilver Paste[J]. journal of electronic packaging,2012,134(4):041003. |
| APA | Yan, Yi,Chen, Xu,Liu, Xingsheng,Mei, Yunhui,&Lu, Guo-Quan.(2012).Die Bonding of High Power 808 nm Laser Diodes With Nanosilver Paste.journal of electronic packaging,134(4),041003. |
| MLA | Yan, Yi,et al."Die Bonding of High Power 808 nm Laser Diodes With Nanosilver Paste".journal of electronic packaging 134.4(2012):041003. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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