Spatial buffer-area assisted antiferroelectric-ferroelectric transition in NaNbO3
文献类型：期刊论文
| 作者 | Hu, Tengfei1,3,4; Fu, Zhengqian2,4; Zhang, Linlin2,4; Ye, Jiaming3; Chen, Xuefeng3; Wang, Genshui1,3; Xu, Fangfang2,4 |
| 刊名 | SCRIPTA MATERIALIA
 |
| 出版日期 | 2023-04-01 |
| 卷号 | 227页码:5 |
| 关键词 | Antiferroelectric Spatial buffer-area Phase transition Energy storage |
| ISSN号 | 1359-6462 |
| DOI | 10.1016/j.scriptamat.2023.115295 |
| 通讯作者 | Wang, Genshui(genshuiwang@mail.sic.ac.cn) ; Xu, Fangfang(ffxu@mail.sic.ac.cn) |
| 英文摘要 | Lead-free antiferroelectric materials can be used in environmental-friendly energy applications and are receiving tremendous attention owing to their high energy-storage density, which is achieved through a phase transition between antiferroelectric and ferroelectric state. Here, by slowing down the antiferroelectric-ferroelectric tran-sition via controllable beam irradiation in a transmission electron microscope, we demonstrate that such a transition in NaNbO3 undergoes by means of forming a buffer-area (about 40-150 nm wide) at the on-going transition front. The spatial buffer-area approximately maintains its shape during moving and are character-ized to be the antiferroelectric phase but exhibits a gradual variation of lattice spacing along the [010] pro-ceeding direction of phase transition. With help of such buffer-area, the overall stress or barrier between the two phases could be considerably reduced compared to the direct change between the two structures. Therefore, our findings provide new insights for understanding the dynamical energy-storage process in antiferroelectric materials. |
| WOS关键词 | PHASE-TRANSITIONS ; CERAMICS ; DOMAINS |
| 资助项目 | National Natural Science Foundation of China[52002388] ; National Natural Science Foundation of China[U2002217] ; Key Deployment Projects of Chinese Academy of Sciences[ZDRW-CN-2021-3-1-18] ; Shanghai Science and Technology Innovation Action Plan[21ZR1472400] ; Shanghai Technical Platform for Testing and Characterization on Inorganic Materials[19DZ2290700] |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000921737700001 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 源URL | [http://119.78.100.183/handle/2S10ELR8/303669]  |
| 专题 | 中国科学院上海药物研究所 |
| 通讯作者 | Wang, Genshui; Xu, Fangfang |
| 作者单位 | 1.Univ Chinese Acad Sci, Hangzhou Inst Adv Study, Sch Chem & Mat Sci, 1 Sublane Xiangshan, Hangzhou 310024, Peoples R China 2.Chinese Acad Sci, Inst Ceram, State Key Lab High Performance Ceram & Superfine M, Shanghai 200050, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Ceram, Anal & Testing Ctr Inorgan Mat, Shanghai 200050, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hu, Tengfei,Fu, Zhengqian,Zhang, Linlin,et al. Spatial buffer-area assisted antiferroelectric-ferroelectric transition in NaNbO3[J]. SCRIPTA MATERIALIA,2023,227:5. |
| APA | Hu, Tengfei.,Fu, Zhengqian.,Zhang, Linlin.,Ye, Jiaming.,Chen, Xuefeng.,...&Xu, Fangfang.(2023).Spatial buffer-area assisted antiferroelectric-ferroelectric transition in NaNbO3.SCRIPTA MATERIALIA,227,5. |
| MLA | Hu, Tengfei,et al."Spatial buffer-area assisted antiferroelectric-ferroelectric transition in NaNbO3".SCRIPTA MATERIALIA 227(2023):5. |
入库方式： OAI收割
来源：上海药物研究所
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