Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth
文献类型：期刊论文
| 作者 | Peng Q(彭庆); Ma ZW(马知未) ; Cai, Shixian; Zhao S(赵帅); Chen, Xiaojia; Cao, Qiang
|
| 刊名 | NANOMATERIALS
 |
| 出版日期 | 2023-04 |
| 卷号 | 13期号:8页码:1382 |
| 关键词 | AlGaN thin film molecular dynamics simulations laser annealing atomistic structure |
| DOI | 10.3390/nano13081382 |
| 英文摘要 | Aluminum gallium nitride (AlGaN) is a nanohybrid semiconductor material with a wide bandgap, high electron mobility, and high thermal stability for various applications including high-power electronics and deep ultraviolet light-emitting diodes. The quality of thin films greatly affects their performance in applications in electronics and optoelectronics, whereas optimizing the growth conditions for high quality is a great challenge. Herein, we have investigated the process parameters for the growth of AlGaN thin films via molecular dynamics simulations. The effects of annealing temperature, the heating and cooling rate, the number of annealing rounds, and high temperature relaxation on the quality of AlGaN thin films have been examined for two annealing modes: constant temperature annealing and laser thermal annealing. Our results reveal that for the mode of constant temperature annealing, the optimum annealing temperature is much higher than the growth temperature in annealing at the picosecond time scale. The lower heating and cooling rates and multiple-round annealing contribute to the increase in the crystallization of the films. For the mode of laser thermal annealing, similar effects have been observed, except that the bonding process is earlier than the potential energy reduction. The optimum AlGaN thin film is achieved at a thermal annealing temperature of 4600 K and six rounds of annealing. Our atomistic investigation provides atomistic insights and fundamental understanding of the annealing process, which could be beneficial for the growth of AlGaN thin films and their broad applications. |
| 分类号 | 二类/Q1 |
| WOS研究方向 | WOS:000979471800001 |
| 语种 | 英语 |
| 资助机构 | Shenzhen Science and Technology Program [KQTD20200820113045081] ; National Natural Science Foundation of China [51727901, XDA25040102] ; LiYing Program of the Institute of Mechanics, Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; [12272378] ; [E1Z1011001] |
| 其他责任者 | Chen, XJ ; Cao, Q |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/92200]  |
| 专题 | 力学研究所_非线性力学国家重点实验室 |
| 作者单位 | 1.(Peng Qing) Univ Chinese Acad Sci Sch Engn Sci Beijing 100049 Peoples R China 2.(Peng Qing, Ma Zhiwei, Zhao Shuai) Chinese Acad Sci Inst Mech State Key Lab Nonlinear Mech Beijing 100190 Peoples R China 3.(Peng Qing, Chen Xiaojia) Harbin Inst Technol Sch Sci Shenzhen 518055 Peoples R China 4.(Cai Shixian, Cao Qiang) Wuhan Univ Inst Technol Sci Wuhan 430072 Peoples R China |
| 推荐引用方式 GB/T 7714 | Peng Q,Ma ZW,Cai, Shixian,et al. Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth[J]. NANOMATERIALS,2023,13(8):1382. |
| APA | 彭庆,马知未,Cai, Shixian,赵帅,Chen, Xiaojia,&Cao, Qiang.(2023).Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth.NANOMATERIALS,13(8),1382. |
| MLA | 彭庆,et al."Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth".NANOMATERIALS 13.8(2023):1382. |
入库方式： OAI收割
来源：力学研究所
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