Simulation of a multichannel vacuum transistor with high cut-off frequency
文献类型:期刊论文
作者 | Shen, Zhihua4; Wang, Xiao3; Ge, Bin4; Wu, Shengli2; Tian, Jinshou1 |
刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B |
出版日期 | 2023-07 |
卷号 | 41期号:4 |
ISSN号 | 2166-2746;2166-2754 |
DOI | 10.1116/6.0002675 |
产权排序 | 4 |
英文摘要 | A multichannel vertical vacuum transistor based on the Fowler-Nordheim tunneling emission mechanism was proposed and numerically investigated. The multichannel structure was demonstrated to be effective in enhancing the drain current when compared to the traditional single-channel structure with the same device size. For example, transconductance increased from 0.42 mS of the single-channel structure to 0.86 mS of the four-channel structure. In addition, when the vacuum channel number increases, the size of a single channel decreases correspondingly, leading to a reduction in electric field intensity on the electron emission surface. Thus, the off-state current dramatically reduced by two orders of magnitude reaching10(-15) A according to the simulated results. In other words, the ON/OFF drain current ratio of the multichannel structure is significantly enhanced. Furthermore, the simulation results indicate that the cut-off frequency of the multichannel device is 33% higher than that of the traditional single-channel one reaching 0.19 THz. |
语种 | 英语 |
出版者 | A V S AMER INST PHYSICS |
WOS记录号 | WOS:001027257800001 |
源URL | [http://ir.opt.ac.cn/handle/181661/96655] |
专题 | 条纹相机工程中心 |
通讯作者 | Shen, Zhihua |
作者单位 | 1.Xian Inst Opt & Precis Mech CAS, State Key Lab Transient Opt & Photon, Xian 710119, Peoples R China 2.Xi An Jiao Tong Univ, Key Lab Phys Elect & Devices, Minist Educ, Xian 710049, Peoples R China 3.Shaanxi Univ Sci & Technol, Sch Elect Informat & Artificial Intelligence, Xian 710049, Peoples R China 4.Nantong Vocat Univ, Sch Elect & Informat Engn, Nantong 226007, Peoples R China |
推荐引用方式 GB/T 7714 | Shen, Zhihua,Wang, Xiao,Ge, Bin,et al. Simulation of a multichannel vacuum transistor with high cut-off frequency[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2023,41(4). |
APA | Shen, Zhihua,Wang, Xiao,Ge, Bin,Wu, Shengli,&Tian, Jinshou.(2023).Simulation of a multichannel vacuum transistor with high cut-off frequency.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,41(4). |
MLA | Shen, Zhihua,et al."Simulation of a multichannel vacuum transistor with high cut-off frequency".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 41.4(2023). |
入库方式: OAI收割
来源:西安光学精密机械研究所
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