Configuration of the active region for the Ge-on-Si photodetector based on carrier mobility
文献类型:期刊论文
作者 | Chang, Chang3,4; Xie, Xiaoping3,4; Li, Tiantian2; Cui, Jishi1 |
刊名 | FRONTIERS IN PHYSICS |
出版日期 | 2023-06-20 |
卷号 | 11 |
ISSN号 | 2296-424X |
关键词 | silicon photonics Ge-on-Si photodetector PIN junction carrier mobility bandwidth responsivity |
DOI | 10.3389/fphy.2023.1150684 |
产权排序 | 1 |
英文摘要 | The design of vertical and lateral PIN Ge-on-Si photodetectors was motivated by the disparity in electron and hole mobilities. In the case of vertical PIN junction detectors, configuring the slab region as n-type doping leads to a notable increase in the bandwidth of approximately 20 GHz compared to utilizing p-type doping for the slab. For lateral PIN junction detectors, we determined that setting the length of the n-type slab region to be 2.8 times that of the p-type slab region, based on the carrier saturation drift rate ratio, does not compromise the bandwidth. This configuration enhances the bandwidth while minimizing light absorption loss from the electrode. The proposed design in this study enhances the performance of Ge-on-Si photodetectors without adding complexity to the fabrication process. The principles applied in this study serve as instructive references for the conceptualization of other photonic or electronic devices, reinforcing the widespread applicability of these design strategies. |
语种 | 英语 |
出版者 | FRONTIERS MEDIA SA |
WOS记录号 | WOS:001022864800001 |
源URL | [http://ir.opt.ac.cn/handle/181661/96641] |
专题 | 光子网络技术研究室 |
通讯作者 | Xie, Xiaoping; Cui, Jishi |
作者单位 | 1.Sch Informat Engn, Sanming, Peoples R China 2.Sch Elect Engn, Xian, Peoples R China 3.Univ Chinese Acad Sci, Beijing, Peoples R China 4.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Xian, Shaanxi, Peoples R China |
推荐引用方式 GB/T 7714 | Chang, Chang,Xie, Xiaoping,Li, Tiantian,et al. Configuration of the active region for the Ge-on-Si photodetector based on carrier mobility[J]. FRONTIERS IN PHYSICS,2023,11. |
APA | Chang, Chang,Xie, Xiaoping,Li, Tiantian,&Cui, Jishi.(2023).Configuration of the active region for the Ge-on-Si photodetector based on carrier mobility.FRONTIERS IN PHYSICS,11. |
MLA | Chang, Chang,et al."Configuration of the active region for the Ge-on-Si photodetector based on carrier mobility".FRONTIERS IN PHYSICS 11(2023). |
入库方式: OAI收割
来源:西安光学精密机械研究所
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