A 1-mu m-Band Injection-Locked Semiconductor Laser with a High Side-Mode Suppression Ratio and Narrow Linewidth
文献类型：期刊论文
| 作者 | J. Q. Chen; C. Chen; Q. Guo; L. Qin; J. W. Zhang; H. Y. Peng; Y. L. Zhou; J. J. Sun; H. Wu; Y. S. Yu |
| 刊名 | Sensors
 |
| 出版日期 | 2022 |
| 卷号 | 22期号:23页码:11 |
| DOI | 10.3390/s22239239 |
| 英文摘要 | We demonstrate a narrow-linewidth, high side-mode suppression ratio (SMSR) semiconductor laser based on the external optical feedback injection locking technology of a femtosecond-apodized (Fs-apodized) fiber Bragg grating (FBG). A single frequency output is achieved by coupling and integrating a wide-gain quantum dot (QD) gain chip with a Fs-apodized FBG in a 1-mu m band. We propose this low-cost and high-integration scheme for the preparation of a series of single-frequency seed sources in this wavelength range by characterizing the performance of 1030 nm and 1080 nm lasers. The lasers have a maximum SMSR of 66.3 dB and maximum output power of 134.6 mW. Additionally, the lasers have minimum Lorentzian linewidths that are measured to be 260.5 kHz; however, a minimum integral linewidth less than 180.4 kHz is observed by testing and analyzing the power spectra of the frequency noise values of the lasers. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/66363]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | J. Q. Chen,C. Chen,Q. Guo,et al. A 1-mu m-Band Injection-Locked Semiconductor Laser with a High Side-Mode Suppression Ratio and Narrow Linewidth[J]. Sensors,2022,22(23):11. |
| APA | J. Q. Chen.,C. Chen.,Q. Guo.,L. Qin.,J. W. Zhang.,...&Y. Q. Ning and L. J. Wang.(2022).A 1-mu m-Band Injection-Locked Semiconductor Laser with a High Side-Mode Suppression Ratio and Narrow Linewidth.Sensors,22(23),11. |
| MLA | J. Q. Chen,et al."A 1-mu m-Band Injection-Locked Semiconductor Laser with a High Side-Mode Suppression Ratio and Narrow Linewidth".Sensors 22.23(2022):11. |
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