中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Blue-Emitting InP/GaP/ZnS Quantum Dots with Enhanced Stability by Siloxane Capping: Implication for Electroluminescent Devices

文献类型:期刊论文

作者C. Shen; H. Tao; Y. Q. Zhu; J. L. Li; J. H. Zou; L. Wang; J. Q. Liang; X. D. Xiao; X. Q. Xu and G. Xu
刊名Acs Applied Nano Materials
出版日期2022
卷号5期号:2页码:11
DOI10.1021/acsanm.1c04486
英文摘要InP quantum dots (QDs) with low toxicity are an ideal alternative to Cd-based QDs. However, the optical properties and stability of blue-emitting InP QDs are far inferior to those of red and green QDs. In this work, we report the synthesis of highly fluorescent InP/GaP/ZnS core/shell/ shell QDs with an emission wavelength of 484 nm and photoluminescence quantum yield of 71%, along with a full width at half-maximum as narrow as 45 nm. In addition, we encapsulated the QDs with siloxane via specific ligand exchange and condensation reactions to improve their stability. The corresponding siloxane capping QD light-emitting device (QLED) shows a maximum luminance of 690 Cd m(-2), an external quantum efficiency of 0.09%, and a much longer lifetime than pristine QDs. As a result, these enable the siloxane capping QDs to achieve a much stronger storage stability and a longer QLED lifetime than pristine QDs.
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语种英语
源URL[http://ir.ciomp.ac.cn/handle/181722/66445]  
专题中国科学院长春光学精密机械与物理研究所
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C. Shen,H. Tao,Y. Q. Zhu,et al. Blue-Emitting InP/GaP/ZnS Quantum Dots with Enhanced Stability by Siloxane Capping: Implication for Electroluminescent Devices[J]. Acs Applied Nano Materials,2022,5(2):11.
APA C. Shen.,H. Tao.,Y. Q. Zhu.,J. L. Li.,J. H. Zou.,...&X. Q. Xu and G. Xu.(2022).Blue-Emitting InP/GaP/ZnS Quantum Dots with Enhanced Stability by Siloxane Capping: Implication for Electroluminescent Devices.Acs Applied Nano Materials,5(2),11.
MLA C. Shen,et al."Blue-Emitting InP/GaP/ZnS Quantum Dots with Enhanced Stability by Siloxane Capping: Implication for Electroluminescent Devices".Acs Applied Nano Materials 5.2(2022):11.

入库方式: OAI收割

来源:长春光学精密机械与物理研究所

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