中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The effect of zinc encapsulation on the Zn3P2-related p-type diffusion in semi-insulated InP substrates

文献类型:期刊论文

作者Y. R. Chen; Z. W. Zhang; G. Q. Miao; H. Jiang and H. Song
刊名Materials Letters
出版日期2022
卷号317页码:4
ISSN号0167-577X
DOI10.1016/j.matlet.2022.132125
英文摘要The zinc diffusion technique has been developed as an efficient way to realize the p-type InP material for planar InP-based optoelectronic devices. Herein, Zn3P2-related zinc diffusion is carried out on semi-insulated InP substrates by rapid thermal annealing using a zinc film as the encapsulation. The effect of the zinc encapsulation on the p-type diffusion in InP has been investigated in detail. The effect includes both positive and negative aspects, and the related formation mechanism is also clarified.
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语种英语
源URL[http://ir.ciomp.ac.cn/handle/181722/66594]  
专题中国科学院长春光学精密机械与物理研究所
推荐引用方式
GB/T 7714
Y. R. Chen,Z. W. Zhang,G. Q. Miao,et al. The effect of zinc encapsulation on the Zn3P2-related p-type diffusion in semi-insulated InP substrates[J]. Materials Letters,2022,317:4.
APA Y. R. Chen,Z. W. Zhang,G. Q. Miao,&H. Jiang and H. Song.(2022).The effect of zinc encapsulation on the Zn3P2-related p-type diffusion in semi-insulated InP substrates.Materials Letters,317,4.
MLA Y. R. Chen,et al."The effect of zinc encapsulation on the Zn3P2-related p-type diffusion in semi-insulated InP substrates".Materials Letters 317(2022):4.

入库方式: OAI收割

来源:长春光学精密机械与物理研究所

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