The effect of zinc encapsulation on the Zn3P2-related p-type diffusion in semi-insulated InP substrates
文献类型:期刊论文
作者 | Y. R. Chen; Z. W. Zhang; G. Q. Miao; H. Jiang and H. Song |
刊名 | Materials Letters
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出版日期 | 2022 |
卷号 | 317页码:4 |
ISSN号 | 0167-577X |
DOI | 10.1016/j.matlet.2022.132125 |
英文摘要 | The zinc diffusion technique has been developed as an efficient way to realize the p-type InP material for planar InP-based optoelectronic devices. Herein, Zn3P2-related zinc diffusion is carried out on semi-insulated InP substrates by rapid thermal annealing using a zinc film as the encapsulation. The effect of the zinc encapsulation on the p-type diffusion in InP has been investigated in detail. The effect includes both positive and negative aspects, and the related formation mechanism is also clarified. |
URL标识 | 查看原文 |
语种 | 英语 |
源URL | [http://ir.ciomp.ac.cn/handle/181722/66594] ![]() |
专题 | 中国科学院长春光学精密机械与物理研究所 |
推荐引用方式 GB/T 7714 | Y. R. Chen,Z. W. Zhang,G. Q. Miao,et al. The effect of zinc encapsulation on the Zn3P2-related p-type diffusion in semi-insulated InP substrates[J]. Materials Letters,2022,317:4. |
APA | Y. R. Chen,Z. W. Zhang,G. Q. Miao,&H. Jiang and H. Song.(2022).The effect of zinc encapsulation on the Zn3P2-related p-type diffusion in semi-insulated InP substrates.Materials Letters,317,4. |
MLA | Y. R. Chen,et al."The effect of zinc encapsulation on the Zn3P2-related p-type diffusion in semi-insulated InP substrates".Materials Letters 317(2022):4. |
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