High Detectivity of MetalSemiconductorMetal Ga2O3 Solar-Blind Photodetector Through Thickness-Regulated Gain
文献类型：期刊论文
| 作者 | Z. Zheng; B. Qiao; Z. Zhang; X. Huang; X. Xie; B. Li; X. Chen; K. Liu; L. Liu and D. Shen |
| 刊名 | IEEE Transactions on Electron Devices
 |
| 出版日期 | 2022 |
| 卷号 | 69期号:8页码:4362-4365 |
| ISSN号 | 00189383 |
| DOI | 10.1109/TED.2022.3184277 |
| 英文摘要 | Detectivity is the most key parameter in weak-signal photodetection, which depends on high photoresponse and low noise simultaneously. In this work, metalsemiconductormetal solar-blind UV detectors with internal gain were fabricated based on high resistant and a certain oxygen vacancy density Ga2O3 thin films. Electrical measurements and electric field simulation indicated that thickening the active layer is helpful for high responsivity. The gain is dominated by the tunneling effect in high electric field under the electrodes. A high photoresponse of 371 A/W and a normalized detectivity up to 6.6 1016 Jones were obtained. 2022 Institute of Electrical and Electronics Engineers Inc.. All rights reserved. |
| URL标识 | 查看原文 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/66705]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Z. Zheng,B. Qiao,Z. Zhang,et al. High Detectivity of MetalSemiconductorMetal Ga2O3 Solar-Blind Photodetector Through Thickness-Regulated Gain[J]. IEEE Transactions on Electron Devices,2022,69(8):4362-4365. |
| APA | Z. Zheng.,B. Qiao.,Z. Zhang.,X. Huang.,X. Xie.,...&L. Liu and D. Shen.(2022).High Detectivity of MetalSemiconductorMetal Ga2O3 Solar-Blind Photodetector Through Thickness-Regulated Gain.IEEE Transactions on Electron Devices,69(8),4362-4365. |
| MLA | Z. Zheng,et al."High Detectivity of MetalSemiconductorMetal Ga2O3 Solar-Blind Photodetector Through Thickness-Regulated Gain".IEEE Transactions on Electron Devices 69.8(2022):4362-4365. |
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