Hybrid metal/Ga2O3/GaN ultraviolet detector for obtaining low dark current and high responsivity
文献类型：期刊论文
| 作者 | G. S. Huang; C. S. Chu; L. Guo; Z. P. Liu; K. Jiang; Y. H. Zhang; X. J. Sun; Z. H. Zhang and D. B. Li |
| 刊名 | Optics Letters
 |
| 出版日期 | 2022 |
| 卷号 | 47期号:6页码:1561-1564 |
| ISSN号 | 0146-9592 |
| DOI | 10.1364/ol.454717 |
| 英文摘要 | In this work, we have proposed and fabricated a metal/Ga2O3/GaN hybrid structure metal-semiconductor-metal ultraviolet photodetector with low dark current and high responsivity. The Schottky contact of Ni/Ga2O3 makes the Ga2O3 layer fully depleted. The strong electric field in the Ga2O3 depletion region can push the photo-induced electrons from the Ga2O3 layer into the GaN layer for more efficient carrier transport. Therefore, the hybrid structure simultaneously utilizes the advantage of the absorption to solar-blind ultraviolet light by the Ga2O3 layer and the high electron mobility of the GaN layer. Thus, the dark current and the photocurrent for the proposed device can be greatly improved. As a result, an extremely high photo-to-darkcurrent ratio of 1.46 x 10(6) can be achieved. Furthermore, quick rise and fall times of 0.213 s and 0.027 s at the applied bias of 6 V are also obtained, respectively. (C) 2022 Optica Publishing Group |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/66737]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | G. S. Huang,C. S. Chu,L. Guo,et al. Hybrid metal/Ga2O3/GaN ultraviolet detector for obtaining low dark current and high responsivity[J]. Optics Letters,2022,47(6):1561-1564. |
| APA | G. S. Huang.,C. S. Chu.,L. Guo.,Z. P. Liu.,K. Jiang.,...&Z. H. Zhang and D. B. Li.(2022).Hybrid metal/Ga2O3/GaN ultraviolet detector for obtaining low dark current and high responsivity.Optics Letters,47(6),1561-1564. |
| MLA | G. S. Huang,et al."Hybrid metal/Ga2O3/GaN ultraviolet detector for obtaining low dark current and high responsivity".Optics Letters 47.6(2022):1561-1564. |
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