Interface engineering enhanced near-infrared electroluminescence in an n-ZnO microwire/p-GaAs heterojunction
文献类型：期刊论文
| 作者 | J. T. Li; B. H. Li; M. Meng; L. L. Sun and M. M. Jiang |
| 刊名 | Optics Express
 |
| 出版日期 | 2022 |
| 卷号 | 30期号:14页码:24773-24787 |
| ISSN号 | 1094-4087 |
| DOI | 10.1364/oe.459837 |
| 英文摘要 | Interface engineering in the fabrication of low-dimensional optoelectronic devices has been highlighted in recent decades to enhance device characteristics such as reducing leakage current, optimizing charge transport, and modulating the energy-band structure. In this paper, we report a dielectric interface approach to realize one-dimensional (1D) wire near-infrared light-emitting devices with high brightness and enhanced emission efficiency. The light-emitting diode is composed of a zinc oxide microwire covered by a silver nanolayer (Ag@ZnO MW), magnesium oxide (MgO) buffer layer, and p-type gallium arsenide (GaAs) substrate. In the device structure, the insertion of a MgO dielectric layer in the n-ZnO MW/p-GaAs heterojunction can be used to modulate the device features, such as changing the charge transport properties, reducing the leakage current and engineering the band alignment. Furthermore, the cladding of the Ag nanolayer on the ZnO MW can optimize the junction interface quality, thus reducing the turn-on voltage and increasing the current injection and electroluminescence (EL) efficiency. The combination of MgO buffer layer and Ag nanolayer cladding can be utilized to achieve modulating the carrier recombination path, interfacial engineering of heterojunction with optimized band alignment and electronic structure in these carefully designed emission devices. Besides, the enhanced near-infrared EL and improved physical contact were also obtained. The study of current transport modulation and energy-band engineering proposes an original and efficient route for improving the device performances of 1D wire-type heterojunction light sources. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/66766]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | J. T. Li,B. H. Li,M. Meng,et al. Interface engineering enhanced near-infrared electroluminescence in an n-ZnO microwire/p-GaAs heterojunction[J]. Optics Express,2022,30(14):24773-24787. |
| APA | J. T. Li,B. H. Li,M. Meng,&L. L. Sun and M. M. Jiang.(2022).Interface engineering enhanced near-infrared electroluminescence in an n-ZnO microwire/p-GaAs heterojunction.Optics Express,30(14),24773-24787. |
| MLA | J. T. Li,et al."Interface engineering enhanced near-infrared electroluminescence in an n-ZnO microwire/p-GaAs heterojunction".Optics Express 30.14(2022):24773-24787. |
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