Introducing voids around the interlayer of AlN by high temperature annealing
文献类型：期刊论文
| 作者 | J. W. Ben; J. L. Luo; Z. C. Lin; X. J. Sun; X. K. Liu and X. H. Li |
| 刊名 | Chinese Physics B
 |
| 出版日期 | 2022 |
| 卷号 | 31期号:7页码:6 |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/ac3d7f |
| 英文摘要 | Introducing voids into AlN layer at a certain height using a simple method is meaningful but challenging. In this work, the AlN/sapphire template with AlN interlayer structure was designed and grown by metal-organic chemical vapor deposition. Then, the AlN template was annealed at 1700 degrees C for an hour to introduce the voids. It was found that voids were formed in the AlN layer after high-temperature annealing and they were mainly distributed around the AlN interlayer. Meanwhile, the dislocation density of the AlN template decreased from 5.26 x 10(9) cm(-2) to 5.10 x 10(8) cm(-2). This work provides a possible method to introduce voids into AlN layer at a designated height, which will benefit the design of AlN-based devices. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/66770]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | J. W. Ben,J. L. Luo,Z. C. Lin,et al. Introducing voids around the interlayer of AlN by high temperature annealing[J]. Chinese Physics B,2022,31(7):6. |
| APA | J. W. Ben,J. L. Luo,Z. C. Lin,X. J. Sun,&X. K. Liu and X. H. Li.(2022).Introducing voids around the interlayer of AlN by high temperature annealing.Chinese Physics B,31(7),6. |
| MLA | J. W. Ben,et al."Introducing voids around the interlayer of AlN by high temperature annealing".Chinese Physics B 31.7(2022):6. |
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