中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
MOCVD growth of MgGa2O4 thin films for high-performance solar-blind UV photodetectors

文献类型:期刊论文

作者Q. C. Hou; K. W. Liu; D. Y. Han; Y. X. Zhu; X. Chen; B. H. Li; L. Liu and D. Z. Shen
刊名Applied Physics Letters
出版日期2022
卷号120期号:1页码:6
ISSN号0003-6951
DOI10.1063/5.0077904
英文摘要Epitaxial MgGa2O4 thin films with a bandgap of 5.18 eV were grown on the c-plane sapphire substrate by using metal organic chemical vapor deposition. The structure, optical, electronic, and optoelectronic properties of MgGa2O4 thin films have been investigated before and after high-temperature annealing in an oxygen or nitrogen atmosphere. In particular, the O-2-annealed MgGa2O4 thin film reveals a high crystalline quality and a low concentration of oxygen vacancies. Moreover, a quick response speed (t(r) = 20 ns, t(d) = 400 ns), a low dark current (& SIM;17 pA at 10 V), and a high UV/Visible rejection ratio (> 10(5)) can be demonstrated in the O-2-annealed MgGa2O4 photodetector, indicating the excellent solar-blind ultraviolet (SBUV) photodetection characteristics. The effect of annealing atmosphere on the photoelectric properties of the film and its physical mechanism were studied. This research provides an effective way to realize high-performance SBUV photodetectors and opens up the application of MgGa2O4 spinel in the field of semiconductor optoelectronic and microelectronic devices.
URL标识查看原文
语种英语
源URL[http://ir.ciomp.ac.cn/handle/181722/66849]  
专题中国科学院长春光学精密机械与物理研究所
推荐引用方式
GB/T 7714
Q. C. Hou,K. W. Liu,D. Y. Han,et al. MOCVD growth of MgGa2O4 thin films for high-performance solar-blind UV photodetectors[J]. Applied Physics Letters,2022,120(1):6.
APA Q. C. Hou.,K. W. Liu.,D. Y. Han.,Y. X. Zhu.,X. Chen.,...&L. Liu and D. Z. Shen.(2022).MOCVD growth of MgGa2O4 thin films for high-performance solar-blind UV photodetectors.Applied Physics Letters,120(1),6.
MLA Q. C. Hou,et al."MOCVD growth of MgGa2O4 thin films for high-performance solar-blind UV photodetectors".Applied Physics Letters 120.1(2022):6.

入库方式: OAI收割

来源:长春光学精密机械与物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。