Multifunctional MoTe2 Fe-FET Enabled by Ferroelectric Polarization-Assisted Charge Trapping
文献类型：期刊论文
| 作者 | J. Gao; X. Lian; Z. X. Chen; S. Shi; E. L. Li; Y. A. Wang; T. Y. Jin; H. P. Chen; L. Liu; J. S. Chen |
| 刊名 | Advanced Functional Materials
 |
| 出版日期 | 2022 |
| 卷号 | 32期号:17页码:9 |
| ISSN号 | 1616-301X |
| DOI | 10.1002/adfm.202110415 |
| 英文摘要 | The "Internet-of-Things"-based information society requires the devices to possess high scaling capability as well as rich functionalities. Hybrid systems coupling 2D semiconductors and functional ferroelectrics are attracting increasing attention as complementary devices to the existing silicon systems due to their outstanding electronic and optoelectronic performances. In this work, interfacial states are introduced on the ferroelectric Hf0.5Zr0.5O2 thin film during the annealing process. Utilizing the synergetic effect of ferroelectric polarization and charge trapping behavior, a multifunctional 2D Fe-FET is demonstrated, exhibiting reliable memory properties, tunable synaptic functions, and reconfigurable photodetection behaviors in one single device. Among them, multiple storage levels are achieved with a long retention time. Flexible plasticity including short-term plasticity (STP)/long-term plasticity (LTP) is emulated successfully, and the excellent emulated synaptic behaviors also contribute to the pattern recognition accuracy of approximate to 81% in artificial neural network simulations. Furthermore, the ferroelectric polarization-dependent optoelectronic response is observed, making it promising for the optoelectronic logic device application. The results pave the way for the fabrication of high-density data process systems with various functions.￥internal-pdf://2124238620/Multifunctional MoTe2 Fe-FET Enabled by Ferroe.pdf￥10.1002/adfm.202110415￥https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/adfm.202110415?download=true￥英语￥sci&ei |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/66871]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | J. Gao,X. Lian,Z. X. Chen,et al. Multifunctional MoTe2 Fe-FET Enabled by Ferroelectric Polarization-Assisted Charge Trapping[J]. Advanced Functional Materials,2022,32(17):9. |
| APA | J. Gao.,X. Lian.,Z. X. Chen.,S. Shi.,E. L. Li.,...&Y. Zhu and W. Chen.(2022).Multifunctional MoTe2 Fe-FET Enabled by Ferroelectric Polarization-Assisted Charge Trapping.Advanced Functional Materials,32(17),9. |
| MLA | J. Gao,et al."Multifunctional MoTe2 Fe-FET Enabled by Ferroelectric Polarization-Assisted Charge Trapping".Advanced Functional Materials 32.17(2022):9. |
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