Size effects of AlGaInP red vertical micro-LEDs on silicon substrate
文献类型：期刊论文
| 作者 | K. L. Fan; J. Tao; Y. Z. Zhao; P. Y. Li; W. C. Sun; L. C. Zhu; J. G. Lv; Y. X. Qin; Q. Wang; J. Q. Liang and W. B. Wang |
| 刊名 | Results in Physics
 |
| 出版日期 | 2022 |
| 卷号 | 36页码:6 |
| ISSN号 | 2211-3797 |
| DOI | 10.1016/j.rinp.2022.105449 |
| 英文摘要 | To study the size effect of AlGaInP red micro-LEDs on the silicon substrate, we fabricated five AlGaInP red micro LEDs with different pixel sizes (160 x 160, 80 x 80, 40 x 40, 20 x 20, and 10 x 10 mu m(2)) and studied their electrical and optical properties. Smaller micro-LEDs have smaller leakage current and larger series resistance and can withstand higher current density without the current crowding effect. Due to the larger perimeter-to area ratio of small-sized micro-LEDs, non-radiative recombination increases, which leads to a lower EQE. But smaller micro-LEDs can alleviate the problem of the high-current efficiency droop. In addition, because of a better heat dissipation under a high injection current, smaller micro-LEDs (> 80 mu m) have a smaller center wavelength shift. These experimental results provide important data for designing and fabricating red micro LEDs with different pixel sizes for diverse future applications. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/67086]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | K. L. Fan,J. Tao,Y. Z. Zhao,et al. Size effects of AlGaInP red vertical micro-LEDs on silicon substrate[J]. Results in Physics,2022,36:6. |
| APA | K. L. Fan.,J. Tao.,Y. Z. Zhao.,P. Y. Li.,W. C. Sun.,...&J. Q. Liang and W. B. Wang.(2022).Size effects of AlGaInP red vertical micro-LEDs on silicon substrate.Results in Physics,36,6. |
| MLA | K. L. Fan,et al."Size effects of AlGaInP red vertical micro-LEDs on silicon substrate".Results in Physics 36(2022):6. |
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