Vacuum Ultraviolet Photodetector with Low Dark Current and Fast Response Speed Based on Polycrystalline AlN Thin Film
文献类型：期刊论文
| 作者 | P. X. Zhang; K. W. Liu; Y. X. Zhu; Q. Ai; J. L. Yang; X. Chen; Z. Cheng; B. H. Li; L. Liu and D. Z. Shen |
| 刊名 | Physica Status Solidi-Rapid Research Letters
 |
| 出版日期 | 2022 |
| 页码 | 6 |
| ISSN号 | 1862-6254 |
| DOI | 10.1002/pssr.202200343 |
| 英文摘要 | A metal-semiconductor-metal (MSM) vacuum ultraviolet (VUV) photodetector is realized on polycrystalline AlN film grown by molecular beam epitaxy. At a bias of 10 V, the dark current of the device is less than 120 fA and the VUV (185 nm) to Ultraviolet-C (255 nm) rejection ratio is more than 10(3). More interestingly, the polycrystalline AlN photodetector shows an ultra-fast response speed with a 90%-10% decay time of approximate to 50 ns, which is much quicker than any other previously reported AlN VUV photodetectors. Furthermore, the device still maintains stability and repeatability at 473 K. This research shows that polycrystalline AlN photodetector has good photodetection performance, which will help advance the design and preparation of AlN-based VUV photodetectors. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/67225]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | P. X. Zhang,K. W. Liu,Y. X. Zhu,et al. Vacuum Ultraviolet Photodetector with Low Dark Current and Fast Response Speed Based on Polycrystalline AlN Thin Film[J]. Physica Status Solidi-Rapid Research Letters,2022:6. |
| APA | P. X. Zhang.,K. W. Liu.,Y. X. Zhu.,Q. Ai.,J. L. Yang.,...&L. Liu and D. Z. Shen.(2022).Vacuum Ultraviolet Photodetector with Low Dark Current and Fast Response Speed Based on Polycrystalline AlN Thin Film.Physica Status Solidi-Rapid Research Letters,6. |
| MLA | P. X. Zhang,et al."Vacuum Ultraviolet Photodetector with Low Dark Current and Fast Response Speed Based on Polycrystalline AlN Thin Film".Physica Status Solidi-Rapid Research Letters (2022):6. |
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