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Wave mixing efficiency in InAs/GaAs semiconductor quantum dot optical amplifiers and lasers

文献类型:期刊论文

作者T. Renaud; H. M. Huang; F. Grillot and D. Bimberg
刊名Laser Physics Letters
出版日期2022
卷号19期号:11页码:6
ISSN号1612-2011
DOI10.1088/1612-202X/ac9595
英文摘要The nonlinear features of both semiconductor optical amplifiers (SOAs) and semiconductor lasers, which are made from the same InAs/GaAs quantum dot (QD) wafers, are investigated in detail. By employing pump-probe driven four-wave mixing as an experimental tool, the wave conversion process shows notably different profiles for the two types of devices. Due to the contributions of ultrafast, sub-picosecond mechanisms, such as carrier heating and spectral hole burning, the pump-probe frequency can be easily tuned to the THz range. SOAs generally benefit more from sub-picosecond carrier dynamics, hence exhibiting a higher conversion efficiency (CE) in the THz range, compared to their laser diode counterparts. The discrepancy even exceeds 10 dB. In addition, laser experiments yield some differences from the amplifier ones, hence leading to a higher nonlinear CE at small detuning ranges. These results strongly improve our insight into the fundamental nonlinear properties of InAs/GaAs QD material, and contribute to the conception of novel devices for future on-chip applications in all-optical communication networks, such as signal wavelength conversion, mode-locking, and optical frequency comb generation.
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语种英语
源URL[http://ir.ciomp.ac.cn/handle/181722/67237]  
专题中国科学院长春光学精密机械与物理研究所
推荐引用方式
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T. Renaud,H. M. Huang,F. Grillot and D. Bimberg. Wave mixing efficiency in InAs/GaAs semiconductor quantum dot optical amplifiers and lasers[J]. Laser Physics Letters,2022,19(11):6.
APA T. Renaud,H. M. Huang,&F. Grillot and D. Bimberg.(2022).Wave mixing efficiency in InAs/GaAs semiconductor quantum dot optical amplifiers and lasers.Laser Physics Letters,19(11),6.
MLA T. Renaud,et al."Wave mixing efficiency in InAs/GaAs semiconductor quantum dot optical amplifiers and lasers".Laser Physics Letters 19.11(2022):6.

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来源:长春光学精密机械与物理研究所

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