Cr3+-doped broadband near infrared diopside phosphor for NIR pc-LED
文献类型：期刊论文
| 作者 | L. M. Fang; Z. D. Hao; L. L. Zhang; H. Wu; H. J. Wu; G. H. Pan and J. H. Zhang |
| 刊名 | Materials Research Bulletin
 |
| 出版日期 | 2022 |
| 卷号 | 149页码:7 |
| ISSN号 | 0025-5408 |
| DOI | 10.1016/j.materresbull.2021.111725 |
| 英文摘要 | Broadband Near-infrared phosphors have attracted great attention for its potential applications in pc-LED as a novel light source for substance measurements based on NIR spectroscopy. Here, CaMgSi2O6:xCr(3+) diopside phosphor were prepared by high temperature solid-state reaction. The Cr3+ emission band undergoes a red-shift from 772 nm to 822 nm followed with band broadening from 132 nm to 197 nm with the increase of x from 0.25% to 6%. Highly thermal stability with the quenching temperature as high as 355 degrees C for 1% and 236 degrees C for 4% Cr3+ concentrations are observed. NIR pc-LEDs were fabricated and high NIR output power of 42.04 mW for the bandwidth of 150 nm and 23.73 mW for a more broaden bandwidth of 187 nm are achieved at 100 mA drive current, respectively. Our results suggest that CaMgSi2O6:Cr3+ phosphors have great potential for applications in broadband NIR pc-LED applications. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/67288]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | L. M. Fang,Z. D. Hao,L. L. Zhang,et al. Cr3+-doped broadband near infrared diopside phosphor for NIR pc-LED[J]. Materials Research Bulletin,2022,149:7. |
| APA | L. M. Fang,Z. D. Hao,L. L. Zhang,H. Wu,H. J. Wu,&G. H. Pan and J. H. Zhang.(2022).Cr3+-doped broadband near infrared diopside phosphor for NIR pc-LED.Materials Research Bulletin,149,7. |
| MLA | L. M. Fang,et al."Cr3+-doped broadband near infrared diopside phosphor for NIR pc-LED".Materials Research Bulletin 149(2022):7. |
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