Low-Temperature As-Doped In2O3Nanowires for Room Temperature NO2Gas Sensing
文献类型：期刊论文
| 作者 | Wang, Hang1,4; Fan, Guijun3,4; Yang, Zaixing2; Han, Ning3,4; Chen, Yunfa3,4; Yang, Jun1 |
| 刊名 | ACS Applied Nano Materials
 |
| 出版日期 | 2022-06-24 |
| 卷号 | 5期号:6页码:7983-7992 |
| 关键词 | Catalysts - Chemical sensors - Chemical vapor deposition - CMOS integrated circuits - Copper oxides - Crystalline materials - Gas detectors - Gas sensing electrodes - III-V semiconductors - Indium arsenide - MOS devices - Oxide semiconductors - Temperature |
| DOI | 10.1021/acsanm.2c01103 |
| 英文摘要 | Recently, In2O3nanowires (NWs) have been extensively explored for high performance electronics and optoelectronics; meanwhile, it is still challenging to synthesize single-crystalline In2O3NWs at low temperature using complementary metal oxide semiconductor (CMOS) technology compatible catalysts. In this study, single-crystalline As-doped In2O3NWs are synthesized by chemical vapor deposition (CVD), using InAs as the In source and Cu2O nanocubes with uniform morphology as the CMOS compatible catalyst seeds. The growth temperature is optimized to be 鈭?00 掳C, far lower than the melting point (827 掳C) of the Cu3As seeds inferring the vapor-solid-solid (VSS) growth mechanism. The obtained NWs have a narrow diameter distribution of 72 卤 18 nm along the entire NW length and a preferential growth direction of 100禄attributable to the epitaxy relationship with the Cu3As 110禄plane. NO2gas sensing measurements show the diameter dependent response, attributable to the increased surface to volume ratio of small diameter NWs. All of these have shown that the outstanding potency of such NWs is based on Cu2O nanocubes for diverse technological applications. 漏 2022 American Chemical Society. All rights reserved. |
| 学科主题 | Metals |
| 项目编号 | This research was supported by the National Natural Science Foundation of China (51602314 and 6150451) and the National Key R&D Program of China (2017YFA0305500). |
| 出版者 | American Chemical Society |
| 源URL | [http://ir.ipe.ac.cn/handle/122111/61265]  |
| 作者单位 | 1.School of Metallurgical Engineering, Xi'an University of Architecture and Technology, Xi'an; 710055, China 2.Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan; 250100, China 3.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China 4.State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing; 100190, China |
| 推荐引用方式 GB/T 7714 | Wang, Hang,Fan, Guijun,Yang, Zaixing,et al. Low-Temperature As-Doped In2O3Nanowires for Room Temperature NO2Gas Sensing[J]. ACS Applied Nano Materials,2022,5(6):7983-7992. |
| APA | Wang, Hang,Fan, Guijun,Yang, Zaixing,Han, Ning,Chen, Yunfa,&Yang, Jun.(2022).Low-Temperature As-Doped In2O3Nanowires for Room Temperature NO2Gas Sensing.ACS Applied Nano Materials,5(6),7983-7992. |
| MLA | Wang, Hang,et al."Low-Temperature As-Doped In2O3Nanowires for Room Temperature NO2Gas Sensing".ACS Applied Nano Materials 5.6(2022):7983-7992. |
入库方式： OAI收割
来源：过程工程研究所
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