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Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus

文献类型：期刊论文

作者Huang, Shenyang4,6; Lu, Yang3; Wang, Fanjie4,6; Lei, Yuchen4,6; Song, Chaoyu4,6; Zhang, Jiasheng4,6; Xing, Qiaoxia4,6; Wang, Chong4,6; Xie, Yuangang4,6; Mu, Lei4,6
刊名PHYSICAL REVIEW LETTERS
出版日期2021-10-26
卷号127期号:18页码:6
ISSN号0031-9007
DOI10.1103/PhysRevLett.127.186401
通讯作者Lu, Yang ; Yan, Hugen
英文摘要Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressureinduced shift of optical transitions exhibits strong layer dependence. In sharp contrast to the bulk counterpart which undergoes a semiconductor to semimetal transition under -1.8 GPa, the band gap of 2 L increases with increasing pressure until beyond 2 GPa. Meanwhile, for a sample with a given layer number, the pressure-induced shift also differs for transitions with different indices. Through the tight-binding model in conjunction with a Morse potential for the interlayer coupling, this layer- and transition-indexdependent pressure effect can be fully accounted. Our study paves a way for versatile van der Waals engineering of two-dimensional BP.
WOS关键词NARROW-GAP ; TRANSITION
资助项目National Key Research and Development Program of China[2017YFA0303504] ; National Key Research and Development Program of China[2016YFA0203900] ; National Natural Science Foundation of China[11874009] ; National Natural Science Foundation of China[12074085] ; National Natural Science Foundation of China[11734007] ; National Natural Science Foundation of China[11804398] ; National Natural Science Foundation of China[42050203] ; National Natural Science Foundation of China[U1530402] ; National Natural Science Foundation of China[U1930401] ; Natural Science Foundation of Shanghai[20JC1414601] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; China Postdoctoral Science Foundation[2020TQ0078] ; Natural Science Basic Research Program of Shaanxi[2020JQ-105] ; Department of Science & Technology of Shaanxi Province[2020GXLH-Z-026] ; Northwestern Polytechnical University[2020GXLH-Z-026] ; DOE Office of Science User Facility[DE-AC02-05CH11231]
WOS研究方向Physics
语种英语
出版者AMER PHYSICAL SOC
WOS记录号WOS:000712052100005
资助机构National Key Research and Development Program of China ; National Natural Science Foundation of China ; Natural Science Foundation of Shanghai ; Strategic Priority Research Program of Chinese Academy of Sciences ; China Postdoctoral Science Foundation ; Natural Science Basic Research Program of Shaanxi ; Department of Science & Technology of Shaanxi Province ; Northwestern Polytechnical University ; DOE Office of Science User Facility
源URL[http://ir.idsse.ac.cn/handle/183446/9414]  
专题深海科学研究部_深海极端环境模拟研究实验室
通讯作者Lu, Yang; Yan, Hugen
作者单位1.Chinese Acad Sci, Inst Deep Sea Sci & Engn, CAS Key Lab Expt Study Deep Sea Extreme Condit, Sanya 572000, Peoples R China
2.Northwestern Polytech Univ, Inst Flexible Elect, Xian 710072, Peoples R China
3.Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China
4.Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
5.Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
6.Fudan Univ, State Key Lab Surface Phys, Minist Educ, Key Lab Micro & Nanophoton Struct, Shanghai 200433, Peoples R China
推荐引用方式
GB/T 7714		 Huang, Shenyang,Lu, Yang,Wang, Fanjie,et al. Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus[J]. PHYSICAL REVIEW LETTERS,2021,127(18):6.
APA Huang, Shenyang.,Lu, Yang.,Wang, Fanjie.,Lei, Yuchen.,Song, Chaoyu.,...&Yan, Hugen.(2021).Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus.PHYSICAL REVIEW LETTERS,127(18),6.
MLA Huang, Shenyang,et al."Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus".PHYSICAL REVIEW LETTERS 127.18(2021):6.

入库方式： OAI收割

来源：深海科学与工程研究所

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