Finite size effect on the Raman frequency of phonons in nano-semiconductors
文献类型：期刊论文
| 作者 | Xia Lei1; Zhong Kai1; Song Yang1; Lu Xin1; Xu Lu-Shun1; Yan Yan1; Li Hong-Dong1; Yuan Fang-Li2; Jiang Jian-Zhong3,4,5; Yu Da-Peng1 |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2012-09-01 |
| 卷号 | 21期号:9页码:文献号: 097801 |
| 关键词 | Raman spectral finite size effect nano-semiconductor |
| ISSN号 | 1674-1056 |
| 通讯作者 | Zhang, SL |
| 英文摘要 | A comprehensive study on Raman spectroscopy with different excitation wavelengths, sample sizes, and sample shapes for optic phonons (OPs) and acoustic phonons (APs) in polar and non-polar nano-semiconductors has been performed. The study affirms that the finite size effect does not appear in the OPs of polar nano-semiconductors, while it exists in all other types of phonons. The absence of the FSE is confirmed to originate from the long-range Frohlich interaction and the breaking of translation symmetry. The result indicates that the Raman spectra of OPs cannot be used as a method to characterize the scale and crystalline property of polar nano-semiconductors. |
| WOS标题词 | Science & Technology ; Physical Sciences |
| 类目[WOS] | Physics, Multidisciplinary |
| 研究领域[WOS] | Physics |
| 关键词[WOS] | EXCITATION WAVELENGTH ; VIBRATIONAL-MODES ; CARBON NANOTUBES ; SCATTERING ; DEPOSITION ; NANOWIRES ; FILMS |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000308870300079 |
| 公开日期 | 2013-10-11 |
| 版本 | 出版稿 |
| 源URL | [http://ir.ipe.ac.cn/handle/122111/3193]  |
| 专题 | 过程工程研究所_多相复杂系统国家重点实验室 |
| 作者单位 | 1.Peking Univ, Sch Phys, Beijing 100871, Peoples R China 2.Chinese Acad Sci, Inst Proc Engn, Beijing 100080, Peoples R China 3.Zhejiang Univ, ICNSM, Lab New Struct Mat, Hangzhou 310027, Peoples R China 4.Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China 5.Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xia Lei,Zhong Kai,Song Yang,et al. Finite size effect on the Raman frequency of phonons in nano-semiconductors[J]. CHINESE PHYSICS B,2012,21(9):文献号: 097801. |
| APA | Xia Lei.,Zhong Kai.,Song Yang.,Lu Xin.,Xu Lu-Shun.,...&Zhang Shu-Lin.(2012).Finite size effect on the Raman frequency of phonons in nano-semiconductors.CHINESE PHYSICS B,21(9),文献号: 097801. |
| MLA | Xia Lei,et al."Finite size effect on the Raman frequency of phonons in nano-semiconductors".CHINESE PHYSICS B 21.9(2012):文献号: 097801. |
入库方式： OAI收割
来源：过程工程研究所
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