Strain engineering of ferroelectric topologies prepared on conventional SrTiO3 substrates buffered with REScO3 layers
文献类型：期刊论文
| 作者 | Chen, S. J.1,2; Tang, Y. L.1; Gong, F. H.1,2; Wang, J. H.1,2; Lv, X. D.1,2; Jiang, R. J.1,2; Liu, S. Z.1,2; Wang, Y. J.1; Zhu, Y. L.1,3; Ma, X. L.1,3,4 |
| 刊名 | ACTA MATERIALIA
 |
| 出版日期 | 2023-01-15 |
| 卷号 | 243页码:7 |
| ISSN号 | 1359-6454 |
| 关键词 | Rare earth scandate Buffer layer Ferroelectric topologies Strain engineering Transmission electron microscopy |
| DOI | 10.1016/j.actamat.2022.118530 |
| 通讯作者 | Tang, Y. L.(yltang@imr.ac.cn) |
| 英文摘要 | Strain engineering of low dimensional ferroelectrics has achieved substantial progresses such as the find-ing of ferroelectric topologies as flux-closures, vortices, skyrmions, merons and polar waves identified in strain mediated ferroelectric multilayers/superlattices or single-layer films. Particularly, tensile strains from REScO3 (RE: rare earth elements) substrates have shown great capabilities for mediating these novel ferroelectric topologies. However, there are large difficulties for preparing high quality REScO3 single -crystal substrates. This fact has induced large obstacles for exploring the structures and properties of fer-roelectric topologies. Here we propose a practical way to prepare REScO3 ultrathin films by a combination of precision pulsed laser deposition (PLD) and controlled post-annealing, which shows the same strain engineering effects on preparing ferroelectric polar topologies. A PrScO3 buffer layer was deposited on a conventional SrTiO3(001) substrate and then annealed at 800 degrees C. Transmission electron microscopy (TEM) investigations revealed the high quality of the obtained PrScO3 films with almost no threading disloca-tions, where the mismatch with the SrTiO3 substrate was relaxed by misfit dislocations and thus a relaxed PrScO3 buffer layer was obtained. Atomic scale studies based on the advanced TEM methods revealed that periodic flux-closure arrays in PbTiO3 layers were successfully obtained, in the later PbTiO3/SrTiO3 multi -layer films grown on the PrScO3 buffered SrTiO3 substrates. These results suggest that the PrScO3 buffer layer here can serves as the common REScO3 single-crystal substrates. This study provides a practical way to prepare REScO3 buffer layers serving as strain engineering ingredient for creating exotic phenomena in perovskite oxide heterostructures.(c) 2022 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
| 资助项目 | National Natural Science Foundation of China[51922100] ; National Natural Science Foundation of China[51971223] ; National Natural Science Foundation of China[52122101] ; Key Research Program of Frontier Sciences CAS[QYZDJ-SSW-JSC010] ; Shenyang National Laboratory for Materials Science[L2019R06] ; Shenyang National Laboratory for Materials Science[L2019R08] ; Shenyang National Laboratory for Materials Science[L2019F01] ; Shenyang National Laboratory for Materials Science[L2019F13] ; Scientific Instrument Developing Project of CAS[YJKYYQ20200066] ; Youth Innovation Promotion Association CAS[Y202048] ; Youth Innovation Promotion Association CAS[2021187] |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| WOS记录号 | WOS:000900120500005 |
| 资助机构 | National Natural Science Foundation of China ; Key Research Program of Frontier Sciences CAS ; Shenyang National Laboratory for Materials Science ; Scientific Instrument Developing Project of CAS ; Youth Innovation Promotion Association CAS |
| 源URL | [http://ir.imr.ac.cn/handle/321006/175597]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Tang, Y. L. |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Wenhua Rd 72, Shenyang 110016, Peoples R China 3.Songshan Lake Mat Lab, Bay Area Ctr Electron Microscopy, Dongguan 523808, Guangdong, Peoples R China 4.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, S. J.,Tang, Y. L.,Gong, F. H.,et al. Strain engineering of ferroelectric topologies prepared on conventional SrTiO3 substrates buffered with REScO3 layers[J]. ACTA MATERIALIA,2023,243:7. |
| APA | Chen, S. J..,Tang, Y. L..,Gong, F. H..,Wang, J. H..,Lv, X. D..,...&Ma, X. L..(2023).Strain engineering of ferroelectric topologies prepared on conventional SrTiO3 substrates buffered with REScO3 layers.ACTA MATERIALIA,243,7. |
| MLA | Chen, S. J.,et al."Strain engineering of ferroelectric topologies prepared on conventional SrTiO3 substrates buffered with REScO3 layers".ACTA MATERIALIA 243(2023):7. |
入库方式： OAI收割
来源：金属研究所
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