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Phototransistors Based on hBN-Encapsulated NiPS3

文献类型：期刊论文

作者Liu, Yingjia1,2; Sun, Xingdan1,2
刊名MAGNETOCHEMISTRY
出版日期2022-09-01
卷号8期号:9页码:8
关键词two-dimensional materials NiPS3 vdWs heterojunction phototransistor Schottky barrier
DOI10.3390/magnetochemistry8090101
通讯作者Sun, Xingdan(xdsun15s@imr.ac.cn)
英文摘要Transition metal phosphorous trichalcogenides (MPX3) have been extensively investigated as photodetectors due to their wide-bandgap semiconductor properties. However, the research involved in the photoresponses at low temperatures remain blank. Here, hexagonal boron nitride (hBN)-encapsulated NiPS3 field effect transistors were fabricated by using the dry-transfer technique, indicating strong stability under atmospheric environments. The NiPS3 devices with the thickness of 10.4 nm, showed broad photoresponses from near-infrared to ultraviolet radiation at the liquid nitrogen temperature, and the minimum of rise time can reach 30 ms under the wavelength of 405 nm. The mechanism of temperature-dependent photoresponses can be deduced by competition between Schottky barrier height and thermal fluctuation. Our findings provide insights into superior phototransistors in few-layered NiPS3 for ultrasensitive light detection.
资助项目National Natural Science Foundation of China (NSFC)[11974357] ; National Natural Science Foundation of China (NSFC)[12204490]
WOS研究方向Chemistry ; Materials Science
语种英语
出版者MDPI
WOS记录号WOS:000858796000001
资助机构National Natural Science Foundation of China (NSFC)
源URL[http://ir.imr.ac.cn/handle/321006/175653]  
专题金属研究所_中国科学院金属研究所
通讯作者Sun, Xingdan
作者单位1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China
推荐引用方式
GB/T 7714		 Liu, Yingjia,Sun, Xingdan. Phototransistors Based on hBN-Encapsulated NiPS3[J]. MAGNETOCHEMISTRY,2022,8(9):8.
APA Liu, Yingjia,&Sun, Xingdan.(2022).Phototransistors Based on hBN-Encapsulated NiPS3.MAGNETOCHEMISTRY,8(9),8.
MLA Liu, Yingjia,et al."Phototransistors Based on hBN-Encapsulated NiPS3".MAGNETOCHEMISTRY 8.9(2022):8.

入库方式： OAI收割

来源：金属研究所

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