Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells
文献类型：期刊论文
| 作者 | Hao, Xiaodong1; Zhang, Xishuo1,2; Sun, Benyao3; Yin, Deqiang3; Dong, Hailiang4; Wang, Jiahui1,2; Huang, Biao1,2; Xu, Yang1,2; Shan, Hengsheng1; Ma, Shufang1 |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2022-12-12 |
| 页码 | 8 |
| 关键词 | polarization charge effect built-in electric field p-n junction semipolar InGaN GaN interface first principles calculation |
| ISSN号 | 1944-8244 |
| DOI | 10.1021/acsami.2c17082 |
| 通讯作者 | Hao, Xiaodong(hao.xiaodong@sust.edu.cn) ; Yin, Deqiang(deqiang.yin@cqu.edu.cn) |
| 英文摘要 | The model system of the InGaN/GaN quantum wells (QWs), based on the first principles calculation, was chosen to understand the underlying mechanism of interfacial polarization and its synergic effect with the built-in electric field (Bef) at the p-n junction in solar cells (SLs). The polarized electric field (Pef) was generated due to the redistribution of electrons and holes at the interface; moreover, the Pef of InGaN/GaN heterostructure on the semipolar (01-11) GaN surface was consistent with that of on the N-polar (000-1) surface, which is on the lines of the Bef and favors the electron-hole separation efficiency in SLs. Furthermore, the growth of high-quality InGaN/GaN QWs on the semipolar (01-11) GaN surface was achieved. Such an atomic-scale investigation provides a fundamental understanding of the polarization charge induced Pef and its interaction coupling with Bef at the p-n junction, which could be generalized to polar material-based SLs. |
| 资助项目 | National Natural Science Foundation of China[21902096] ; National Natural Science Foundation of China[11972097] ; Natural Science Special Project of Education Department of Shaanxi Province[19JK0136] ; Scientific Research Foundation of Shaanxi University of Science and Technology[126061803] ; Scientific Research Foundation from Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering[2021SX-AT001] |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000897517200001 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | National Natural Science Foundation of China ; Natural Science Special Project of Education Department of Shaanxi Province ; Scientific Research Foundation of Shaanxi University of Science and Technology ; Scientific Research Foundation from Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering |
| 源URL | [http://ir.imr.ac.cn/handle/321006/175747]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Hao, Xiaodong; Yin, Deqiang |
| 作者单位 | 1.Shaanxi Univ Sci & Technol, Mat Inst Atom & Mol Sci, Xian 710021, Peoples R China 2.Shaanxi Univ Sci & Technol, Sch Mat Sci & Engn, Xian 710021, Peoples R China 3.Chongqing Univ, Coll Aerosp Engn, Chongqing 400044, Peoples R China 4.Taiyuan Univ Technol, Key Lab Interface Sci & Engn Adv Mat, Taiyuan 030024, Peoples R China 5.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 6.Shanxi Zheda Inst Adv Mat & Chem Engn, Taiyuan 030024, Shanxi, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hao, Xiaodong,Zhang, Xishuo,Sun, Benyao,et al. Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells[J]. ACS APPLIED MATERIALS & INTERFACES,2022:8. |
| APA | Hao, Xiaodong.,Zhang, Xishuo.,Sun, Benyao.,Yin, Deqiang.,Dong, Hailiang.,...&Xu, Bingshe.(2022).Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells.ACS APPLIED MATERIALS & INTERFACES,8. |
| MLA | Hao, Xiaodong,et al."Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells".ACS APPLIED MATERIALS & INTERFACES (2022):8. |
入库方式： OAI收割
来源：金属研究所
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