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Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite

文献类型：期刊论文

作者Han, Mengjiao1,2,3,4; Wang, Cong5; Niu, Kangdi1,2; Yang, Qishuo1,2; Wang, Chuanshou1,2; Zhang, Xi6,7; Dai, Junfeng8; Wang, Yujia9; Ma, Xiuliang4,10; Wang, Junling1,2
刊名NATURE COMMUNICATIONS
出版日期2022-10-06
卷号13期号:1页码:9
DOI10.1038/s41467-022-33617-x
通讯作者Kang, Lixing(lxkang2013@sinano.ac.cn) ; Ji, Wei(wji@ruc.edu.cn) ; Lin, Junhao(linjh@sustech.edu.cn)
英文摘要Emerging functionalities in two-dimensional materials, such as ferromagnetism, superconductivity and ferroelectricity, open new avenues for promising nanoelectronic applications. Here, we report the discovery of intrinsic in-plane room-temperature ferroelectricity in two-dimensional Bi2TeO5 grown by chemical vapor deposition, where spontaneous polarization originates from Bi column displacements. We found an intercalated buffer layer consist of mixed Bi/Te column as 180 degrees domain wall which enables facile polarized domain engineering, including continuously tunable domain width by pinning different concentration of buffer layers, and even ferroelectric-antiferroelectric phase transition when the polarization unit is pinned down to single atomic column. More interestingly, the intercalated Bi/Te buffer layer can interconvert to polarized Bi columns which end up with series terraced domain walls and unusual fan-shaped ferroelectric domain. The buffer layer induced size and shape tunable ferroelectric domain in two-dimensional Bi2TeO5 offer insights into the manipulation of functionalities in van der Waals materials for future nanoelectronics. Tunability of ferroelectric domain structure is significant in ferroelectric materials. Here, the authors present in-plane ferroelectricity in 2D Bi2TeO5 in which the ferroelectric domain size and shape can be continuously tuned by the Bi/Te ratio.
资助项目Ministry of Science and Technology (MOST) of China[2018YFE0202700] ; National Natural Science Foundation of China[11974156] ; National Natural Science Foundation of China[61761166009] ; National Natural Science Foundation of China[11974422] ; National Natural Science Foundation of China[12104504] ; Guangdong International Science Collaboration Project[2019A050510001] ; Guangdong Innovative and Entrepreneurial Research Team Program[2019ZT08C044] ; Shenzhen Science and Technology Programs[KQTD20190929173815000] ; Shenzhen Science and Technology Programs[20200925161102001] ; Science, Technology and Innovation Commission of Shenzhen Municipality[ZDSYS20190902092905285] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Fundamental Research Funds for the Central Universities ; Research Funds of Renmin University of China[22XNKJ30] ; Development and Reform Commission of Shenzhen Municipality ; China Postdoctoral Science Foundation[2021M693479]
WOS研究方向Science & Technology - Other Topics
语种英语
WOS记录号WOS:000864633700027
出版者NATURE PORTFOLIO
资助机构Ministry of Science and Technology (MOST) of China ; National Natural Science Foundation of China ; Guangdong International Science Collaboration Project ; Guangdong Innovative and Entrepreneurial Research Team Program ; Shenzhen Science and Technology Programs ; Science, Technology and Innovation Commission of Shenzhen Municipality ; Strategic Priority Research Program of Chinese Academy of Sciences ; Fundamental Research Funds for the Central Universities ; Research Funds of Renmin University of China ; Development and Reform Commission of Shenzhen Municipality ; China Postdoctoral Science Foundation
源URL[http://ir.imr.ac.cn/handle/321006/176152]  
专题金属研究所_中国科学院金属研究所
通讯作者Kang, Lixing; Ji, Wei; Lin, Junhao
作者单位1.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
2.Southern Univ Sci & Technol, Shenzhen Key Lab Adv Quantum Funct Mat & Devices, Shenzhen 518055, Peoples R China
3.Southeast Univ, SEU FEI Nano Pico Ctr, Key Lab MEMS, Minist Educ, Nanjing 210096, Peoples R China
4.Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
5.Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano D, Dept Phys, Beijing 100872, Peoples R China
6.Northwestern Polytech Univ, Frontiers Sci Ctr Flexible Elect FSCFE, Shaanxi Inst Flexible Elect SIFE, Xian 710129, Peoples R China
7.Northwestern Polytech Univ, Shaanxi Inst Biomed Mat & Engn SIBME, Xian 710129, Peoples R China
8.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
9.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
10.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
推荐引用方式
GB/T 7714		 Han, Mengjiao,Wang, Cong,Niu, Kangdi,et al. Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite[J]. NATURE COMMUNICATIONS,2022,13(1):9.
APA Han, Mengjiao.,Wang, Cong.,Niu, Kangdi.,Yang, Qishuo.,Wang, Chuanshou.,...&Lin, Junhao.(2022).Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite.NATURE COMMUNICATIONS,13(1),9.
MLA Han, Mengjiao,et al."Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite".NATURE COMMUNICATIONS 13.1(2022):9.

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