High photodetection performance on vertically oriented topological insulator Sb2Te3/Silicon heterostructure
文献类型：期刊论文
| 作者 | Li, Mingze1; Wang, Zhenhua1; Han, Dan1; Shi, Xudong1; Li, Tingting1; Gao, Xuan P. A.2; Zhang, Zhidong1 |
| 刊名 | JOURNAL OF SOLID STATE CHEMISTRY
 |
| 出版日期 | 2022-11-01 |
| 卷号 | 315页码:6 |
| ISSN号 | 0022-4596 |
| 关键词 | Topological insulators Sb 2 Te 3 Si heterostructure Vertically aligned nanoplates High surface -to -bulk ratio Photoelectric property |
| DOI | 10.1016/j.jssc.2022.123506 |
| 通讯作者 | Li, Mingze(mzli14s@imr.ac.cn) ; Wang, Zhenhua(zhwang@imr.ac.cn) |
| 英文摘要 | The coexistence of bulk electronic band gap and gapless surface states of topological insulators (TIs) opens up many new opportunities in optoelectronic devices. Here we demonstrate the synthesis and photodetection response of vertical Sb2Te3 nanoplate film grown on n-type Si substrates. The small bulk bandgap of Sb2Te3 and surface states conduction lead to effective light absorption and photocarrier transport. The device exhibits a significant photoresponse over a broad spectral range between 350 and 1400 nm. The switching speed and on/off ratio Iph/Id are estimated to be 3 ms and 5900, respectively, which are much better than those of other TI-based photodetectors. Given the simple device preparation and compatibility with silicon technology, the unconven-tional structure Sb2Te3/Si heterostructure holds great promise for high-performance optoelectronic applications. |
| 资助项目 | National Natural Science Foundation of China (NSFC)[51971220] ; National Natural Science Foundation of China (NSFC)[52031014] |
| WOS研究方向 | Chemistry |
| 语种 | 英语 |
| 出版者 | ACADEMIC PRESS INC ELSEVIER SCIENCE |
| WOS记录号 | WOS:000863981900004 |
| 资助机构 | National Natural Science Foundation of China (NSFC) |
| 源URL | [http://ir.imr.ac.cn/handle/321006/176205]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Li, Mingze; Wang, Zhenhua |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA |
| 推荐引用方式 GB/T 7714 | Li, Mingze,Wang, Zhenhua,Han, Dan,et al. High photodetection performance on vertically oriented topological insulator Sb2Te3/Silicon heterostructure[J]. JOURNAL OF SOLID STATE CHEMISTRY,2022,315:6. |
| APA | Li, Mingze.,Wang, Zhenhua.,Han, Dan.,Shi, Xudong.,Li, Tingting.,...&Zhang, Zhidong.(2022).High photodetection performance on vertically oriented topological insulator Sb2Te3/Silicon heterostructure.JOURNAL OF SOLID STATE CHEMISTRY,315,6. |
| MLA | Li, Mingze,et al."High photodetection performance on vertically oriented topological insulator Sb2Te3/Silicon heterostructure".JOURNAL OF SOLID STATE CHEMISTRY 315(2022):6. |
入库方式： OAI收割
来源：金属研究所
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