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Uniform self-rectifying resistive random-access memory based on an MXene-TiO2 Schottky junction

文献类型：期刊论文

作者Zang, Chao1,2; Li, Bo1,2; Sun, Yun1,2; Feng, Shun1,3; Wang, Xin-Zhe1,2; Wang, Xiaohui1,2; Sun, Dong-Ming1,2
刊名NANOSCALE ADVANCES
出版日期2022-10-11
页码8
ISSN号2516-0230
DOI10.1039/d2na00281g
通讯作者Sun, Yun(yunsun@imr.ac.cn) ; Wang, Xiaohui(wang@imr.ac.cn) ; Sun, Dong-Ming(dmsun@imr.ac.cn)
英文摘要For filamentary resistive random-access memory (RRAM) devices, the switching behavior between different resistance states usually occurs abruptly, while the random formation of conductive filaments usually results in large fluctuations in resistance states, leading to poor uniformity. Schottky barrier modulation enables resistive switching through charge trapping/de-trapping at the top-electrode/oxide interface, which is effective for improving the uniformity of RRAM devices. Here, we report a uniform RRAM device based on a MXene-TiO2 Schottky junction. The defect traps within the MXene formed during its fabricating process can trap and release the charges at the MXene-TiO2 interface to modulate the Schottky barrier for the resistive switching behavior. Our devices exhibit excellent current on-off ratio uniformity, device-to-device reproducibility, long-term retention, and endurance reliability. Due to the different carrier-blocking abilities of the MXene-TiO2 and TiO2-Si interface barriers, a self-rectifying behavior can be obtained with a rectifying ratio of 10(3), which offers great potential for large-scale RRAM applications based on MXene materials.
资助项目National Key Research and Development Program of China[2021YFA1200801] ; National Natural Science Foundation of China[62125406] ; National Natural Science Foundation of China[62074150] ; National Natural Science Foundation of China[52188101] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB30000000] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[ZDBS-LY-JSC027]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science
语种英语
出版者ROYAL SOC CHEMISTRY
WOS记录号WOS:000871601500001
资助机构National Key Research and Development Program of China ; National Natural Science Foundation of China ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences
源URL[http://ir.imr.ac.cn/handle/321006/176338]  
专题金属研究所_中国科学院金属研究所
通讯作者Sun, Yun; Wang, Xiaohui; Sun, Dong-Ming
作者单位1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China
3.ShanghaiTech Univ, Sch Phys Sci & Technol, 393 Huaxiazhong Rd, Shanghai 200031, Peoples R China
推荐引用方式
GB/T 7714		 Zang, Chao,Li, Bo,Sun, Yun,et al. Uniform self-rectifying resistive random-access memory based on an MXene-TiO2 Schottky junction[J]. NANOSCALE ADVANCES,2022:8.
APA Zang, Chao.,Li, Bo.,Sun, Yun.,Feng, Shun.,Wang, Xin-Zhe.,...&Sun, Dong-Ming.(2022).Uniform self-rectifying resistive random-access memory based on an MXene-TiO2 Schottky junction.NANOSCALE ADVANCES,8.
MLA Zang, Chao,et al."Uniform self-rectifying resistive random-access memory based on an MXene-TiO2 Schottky junction".NANOSCALE ADVANCES (2022):8.

入库方式： OAI收割

来源：金属研究所

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