中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Phase Competition in High-Quality Epitaxial Antiferroelectric PbZrO3 Thin Films

文献类型:期刊论文

作者Si, Yangyang1; Zhang, Tianfu1; Chen, Zuhuang1,9; Zhang, Qinghua2; Xu, Shuai2; Lin, Ting2; Huang, Haoliang3; Zhou, Chao1; Chen, Shanquan1; Liu, Suzhen4,5
刊名ACS APPLIED MATERIALS & INTERFACES
出版日期2022-11-01
页码9
ISSN号1944-8244
关键词PbZrO3 antiferroelectric epitaxial thin films phase transitions ferroelectric
DOI10.1021/acsami.2c14291
通讯作者Chen, Zuhuang(zuhuang@hit.edu.cn) ; Lin, Xi(linxi@hit.edu.cn)
英文摘要Antiferroelectric PbZrO3 has attracted renewed interest in recent years because of its unique properties and wide range of potential applications. However, the nature of antiferroelectricity and its evolution with the electric field and temperature remain controversial, mostly due to the difficulty of obtaining high-quality single-crystal samples. The lack of consensus regarding the phase transition in PbZrO3 is not only important on a fundamental side but also greatly hinders further applications. Herein, high-quality PbZrO3 epitaxial thin films are successfully fabricated by pulsed laser deposition. The structural and physical properties of the films are systematically studied via a combination of electric property measurements, X-ray diffraction, scanning transmission electron microscopy imaging, and second-harmonic generation studies. Our studies unveil the noncentrosymmetric nature of PbZrO3 films at room temperature. Moreover, the Curie temperature increased to 270 degrees, similar to 40 degrees higher than that in the bulk, and no intermediate ferroelectric phase was observed. Besides, an incipient ferroelectric with relaxor-like behavior above the Curie temperature due to the existence of a local polar cluster in the high-temperature paraelectric phase is experimentally observed for the first time. Our studies provide a better understanding of PbZrO3 thin films and pave the way for practical applications of antiferroelectric material in modern electronic devices.
资助项目National Natural Science Foundation of China[U1932116] ; National Natural Science Foundation of China[52072400] ; National Natural Science Foundation of China[11721404] ; National Natural Science Foundation of China[11974390] ; National Natural Science Foundation of China[51922100] ; Guangdong Basic and Applied Basic Research Foundation[2020B1515020029] ; Shenzhen Science and Technology Innovation project[JCYJ20200109112829287] ; Shenzhen Science and Technology Program[KQTD20200820113045083] ; Shenzhen Science and Technology Program[ZDSYS20190902093220279] ; China Postdoctoral Science Foundation[2022T150158] ; Fund of Science and Technology on Reactor Fuel and Materials Laboratory[JCKYS2019201074] ; Scientific Instrument Developing Project of CAS[YJKYYQ20200066] ; Youth Innovation Promotion Association of CAS[Y202048] ; Natural Science Foundation of Jiangsu Province[BK20210565] ; Basic Science (Natural Science) Research Project of Higher Education Institutions of Jiangsu Province[21KJB470009]
WOS研究方向Science & Technology - Other Topics ; Materials Science
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000884793600001
资助机构National Natural Science Foundation of China ; Guangdong Basic and Applied Basic Research Foundation ; Shenzhen Science and Technology Innovation project ; Shenzhen Science and Technology Program ; China Postdoctoral Science Foundation ; Fund of Science and Technology on Reactor Fuel and Materials Laboratory ; Scientific Instrument Developing Project of CAS ; Youth Innovation Promotion Association of CAS ; Natural Science Foundation of Jiangsu Province ; Basic Science (Natural Science) Research Project of Higher Education Institutions of Jiangsu Province
源URL[http://ir.imr.ac.cn/handle/321006/176786]  
专题金属研究所_中国科学院金属研究所
通讯作者Chen, Zuhuang; Lin, Xi
作者单位1.Harbin Inst Technol, Sch Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
2.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
3.Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Anhui Lab Adv Photon Sci & Technol, Hefei 230026, Anhui, Peoples R China
4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
5.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China
6.Univ Sci & Technol China, Dept Phys, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China
7.Univ Sci & Technol China, Dept Phys, CAS Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China
8.Nanjing Normal Univ, Sch Energy & Mech Engn, Microand Nanoscale Thermal Measurement & Thermal M, Nanjing 210046, Jiangsu, Peoples R China
9.Harbin Inst Technol, Flexible Printed Elect Technol Ctr, Shenzhen 518055, Guangdong, Peoples R China
10.Harbin Inst Technol, Blockchain Dev & Res Inst, Shenzhen 518055, Guangdong, Peoples R China
推荐引用方式
GB/T 7714
Si, Yangyang,Zhang, Tianfu,Chen, Zuhuang,et al. Phase Competition in High-Quality Epitaxial Antiferroelectric PbZrO3 Thin Films[J]. ACS APPLIED MATERIALS & INTERFACES,2022:9.
APA Si, Yangyang.,Zhang, Tianfu.,Chen, Zuhuang.,Zhang, Qinghua.,Xu, Shuai.,...&Lin, Xi.(2022).Phase Competition in High-Quality Epitaxial Antiferroelectric PbZrO3 Thin Films.ACS APPLIED MATERIALS & INTERFACES,9.
MLA Si, Yangyang,et al."Phase Competition in High-Quality Epitaxial Antiferroelectric PbZrO3 Thin Films".ACS APPLIED MATERIALS & INTERFACES (2022):9.

入库方式: OAI收割

来源:金属研究所

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