中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 深海科学与工程研究所
  3. 中国科学院深海科学与工程研究所
  4. 深海工程技术部
  5. 深海信息技术研究室
A SiC asymmetric cell trench MOSFET with a split gate and integrated p(+)-poly Si/SiC heterojunction freewheeling diode

文献类型：期刊论文

作者Jiang, Kaizhe3; Zhang, Xiaodong3; Tian, Chuan2; Zhang, Shengrong1; Zheng, Liqiang3; He, Rongzhao3; Shen, Chong3
刊名CHINESE PHYSICS B
出版日期2023-04-01
卷号32期号:5页码:8
ISSN号1674-1056
关键词split gate (SG) heterojunction freewheeling diode (HJD) SiC asymmetric cell trench MOSFET turn-on loss turn-off loss
DOI10.1088/1674-1056/acbd2d
通讯作者Zhang, Xiaodong(zhangxiaodong@hainanu.edu.cn) ; Shen, Chong(chongshen@hainanu.edu.cn)
英文摘要A new SiC asymmetric cell trench metal-oxide-semiconductor field effect transistor (MOSFET) with a split gate (SG) and integrated p(+)-poly Si/SiC heterojunction freewheeling diode (SGHJD-TMOS) is investigated in this article. The SG structure of the SGHJD-TMOS structure can effectively reduce the gate-drain capacitance and reduce the high gate-oxide electric field. The integrated p(+)-poly Si/SiC heterojunction freewheeling diode substantially improves body diode characteristics and reduces switching losses without degrading the static characteristics of the device. Numerical analysis results show that, compared with the conventional asymmetric cell trench MOSFET (CA-TMOS), the high-frequency figure of merit (HF-FOM, R (on,sp) x Q (gd,sp)) is reduced by 92.5%, and the gate-oxide electric field is reduced by 75%. In addition, the forward conduction voltage drop (V (F)) and gate-drain charge (Q (gd)) are reduced from 2.90 V and 63.5 mu C/cm(2) in the CA-TMOS to 1.80 V and 26.1 mu C/cm(2) in the SGHJD-TMOS, respectively. Compared with the CA-TMOS, the turn-on loss (E (on)) and turn-off loss (E (off)) of the SGHJD-TMOS are reduced by 21.1% and 12.2%, respectively.
资助项目Major Science and Technology Projects of Hainan Province, China[ZDKJ2021023] ; Major Science and Technology Projects of Hainan Province, China[ZDKJ2021042] ; Hainan Provincial Natural Science Foundation of China[622QN285] ; Hainan Provincial Natural Science Foundation of China[521QN210]
WOS研究方向Physics
语种英语
出版者IOP Publishing Ltd
WOS记录号WOS:000979810200001
资助机构Major Science and Technology Projects of Hainan Province, China ; Hainan Provincial Natural Science Foundation of China
源URL[http://ir.idsse.ac.cn/handle/183446/10467]  
专题深海工程技术部_深海信息技术研究室
通讯作者Zhang, Xiaodong; Shen, Chong
作者单位1.Sansha Guohaixintong Technol Dev Co Ltd, Haikou 570100, Peoples R China
2.Chinese Acad Sci, Inst Deep Sea Sci & Engn, Sanya 572000, Peoples R China
3.Hainan Univ, State Key Lab Marine Resource Utilizat South China, Haikou 570228, Peoples R China
推荐引用方式
GB/T 7714		 Jiang, Kaizhe,Zhang, Xiaodong,Tian, Chuan,et al. A SiC asymmetric cell trench MOSFET with a split gate and integrated p(+)-poly Si/SiC heterojunction freewheeling diode[J]. CHINESE PHYSICS B,2023,32(5):8.
APA Jiang, Kaizhe.,Zhang, Xiaodong.,Tian, Chuan.,Zhang, Shengrong.,Zheng, Liqiang.,...&Shen, Chong.(2023).A SiC asymmetric cell trench MOSFET with a split gate and integrated p(+)-poly Si/SiC heterojunction freewheeling diode.CHINESE PHYSICS B,32(5),8.
MLA Jiang, Kaizhe,et al."A SiC asymmetric cell trench MOSFET with a split gate and integrated p(+)-poly Si/SiC heterojunction freewheeling diode".CHINESE PHYSICS B 32.5(2023):8.

入库方式： OAI收割

来源：深海科学与工程研究所

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。