Sintering temperature dependence of grain boundary resistivity in a rare-earth-doped ZnO varistor
文献类型:期刊论文
作者 | Cai, Jingnan; Lin, Yuan-Hua; Li, Ming; Nan, Ce-Wen; He, Jinliang; Yuan, Fangli |
刊名 | JOURNAL OF THE AMERICAN CERAMIC SOCIETY
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出版日期 | 2007 |
卷号 | 90期号:1页码:291-294 |
关键词 | current-voltage characteristics zinc-oxide varistors conduction ceramics |
ISSN号 | 0002-7820 |
其他题名 | J. Am. Ceram. Soc. |
中文摘要 | We present a rare-earth-doped ZnO ceramic with nonohmic electrical properties. Analysis of the microstructure and composition indicates that the ceramic is composed of the main phase of ZnO and the second phase of rare-earth oxides (e.g., Dy2O3, Pr6O11, Pr2O3). The average grain size is markedly increased from 3 to 18 mu m, with an increase in the sintering temperature from 1150 degrees to 1350 degrees C. The corresponding varistor voltage and nonlinear coefficient decrease from 1014 to 578 V/mm, and from 15.8 to 6.8, respectively. The resistivity of grain and grain boundary evaluated by the complex impedance spectrum indicates that the resistivity of the grain is approximately constant (similar to 10(3) Omega), and the resistivity of the grain boundary decreases. The relative dielectric permittivity of the sintered ceramic samples is much larger than that of pure ZnO ceramic, which should be ascribed to the internal boundary layer capacitance effect. |
英文摘要 | We present a rare-earth-doped ZnO ceramic with nonohmic electrical properties. Analysis of the microstructure and composition indicates that the ceramic is composed of the main phase of ZnO and the second phase of rare-earth oxides (e.g., Dy2O3, Pr6O11, Pr2O3). The average grain size is markedly increased from 3 to 18 mu m, with an increase in the sintering temperature from 1150 degrees to 1350 degrees C. The corresponding varistor voltage and nonlinear coefficient decrease from 1014 to 578 V/mm, and from 15.8 to 6.8, respectively. The resistivity of grain and grain boundary evaluated by the complex impedance spectrum indicates that the resistivity of the grain is approximately constant (similar to 10(3) Omega), and the resistivity of the grain boundary decreases. The relative dielectric permittivity of the sintered ceramic samples is much larger than that of pure ZnO ceramic, which should be ascribed to the internal boundary layer capacitance effect. |
WOS标题词 | Science & Technology ; Technology |
类目[WOS] | Materials Science, Ceramics |
研究领域[WOS] | Materials Science |
关键词[WOS] | CURRENT-VOLTAGE CHARACTERISTICS ; ZINC-OXIDE VARISTORS ; CONDUCTION ; CERAMICS |
收录类别 | SCI |
原文出处 | |
语种 | 英语 |
WOS记录号 | WOS:000243377200046 |
公开日期 | 2013-10-15 |
版本 | 出版稿 |
源URL | [http://ir.ipe.ac.cn/handle/122111/3285] ![]() |
专题 | 过程工程研究所_研究所(批量导入) |
作者单位 | 1.Tsing Hua Univ, State Key Lab New Ceram & Fine Proc, Dept Mat Sci & Engn, Beijing 100084, Peoples R China 2.Tsing Hua Univ, Dept Elect Engn, Beijing 100084, Peoples R China 3.Chinese Acad Sci, Inst Proc Engn, Beijing 100080, Peoples R China |
推荐引用方式 GB/T 7714 | Cai, Jingnan,Lin, Yuan-Hua,Li, Ming,et al. Sintering temperature dependence of grain boundary resistivity in a rare-earth-doped ZnO varistor[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY,2007,90(1):291-294. |
APA | Cai, Jingnan,Lin, Yuan-Hua,Li, Ming,Nan, Ce-Wen,He, Jinliang,&Yuan, Fangli.(2007).Sintering temperature dependence of grain boundary resistivity in a rare-earth-doped ZnO varistor.JOURNAL OF THE AMERICAN CERAMIC SOCIETY,90(1),291-294. |
MLA | Cai, Jingnan,et al."Sintering temperature dependence of grain boundary resistivity in a rare-earth-doped ZnO varistor".JOURNAL OF THE AMERICAN CERAMIC SOCIETY 90.1(2007):291-294. |
入库方式: OAI收割
来源:过程工程研究所
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