中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Sintering temperature dependence of grain boundary resistivity in a rare-earth-doped ZnO varistor

文献类型:期刊论文

作者Cai, Jingnan; Lin, Yuan-Hua; Li, Ming; Nan, Ce-Wen; He, Jinliang; Yuan, Fangli
刊名JOURNAL OF THE AMERICAN CERAMIC SOCIETY
出版日期2007
卷号90期号:1页码:291-294
关键词current-voltage characteristics zinc-oxide varistors conduction ceramics
ISSN号0002-7820
其他题名J. Am. Ceram. Soc.
中文摘要We present a rare-earth-doped ZnO ceramic with nonohmic electrical properties. Analysis of the microstructure and composition indicates that the ceramic is composed of the main phase of ZnO and the second phase of rare-earth oxides (e.g., Dy2O3, Pr6O11, Pr2O3). The average grain size is markedly increased from 3 to 18 mu m, with an increase in the sintering temperature from 1150 degrees to 1350 degrees C. The corresponding varistor voltage and nonlinear coefficient decrease from 1014 to 578 V/mm, and from 15.8 to 6.8, respectively. The resistivity of grain and grain boundary evaluated by the complex impedance spectrum indicates that the resistivity of the grain is approximately constant (similar to 10(3) Omega), and the resistivity of the grain boundary decreases. The relative dielectric permittivity of the sintered ceramic samples is much larger than that of pure ZnO ceramic, which should be ascribed to the internal boundary layer capacitance effect.
英文摘要We present a rare-earth-doped ZnO ceramic with nonohmic electrical properties. Analysis of the microstructure and composition indicates that the ceramic is composed of the main phase of ZnO and the second phase of rare-earth oxides (e.g., Dy2O3, Pr6O11, Pr2O3). The average grain size is markedly increased from 3 to 18 mu m, with an increase in the sintering temperature from 1150 degrees to 1350 degrees C. The corresponding varistor voltage and nonlinear coefficient decrease from 1014 to 578 V/mm, and from 15.8 to 6.8, respectively. The resistivity of grain and grain boundary evaluated by the complex impedance spectrum indicates that the resistivity of the grain is approximately constant (similar to 10(3) Omega), and the resistivity of the grain boundary decreases. The relative dielectric permittivity of the sintered ceramic samples is much larger than that of pure ZnO ceramic, which should be ascribed to the internal boundary layer capacitance effect.
WOS标题词Science & Technology ; Technology
类目[WOS]Materials Science, Ceramics
研究领域[WOS]Materials Science
关键词[WOS]CURRENT-VOLTAGE CHARACTERISTICS ; ZINC-OXIDE VARISTORS ; CONDUCTION ; CERAMICS
收录类别SCI
原文出处://WOS:000243377200046
语种英语
WOS记录号WOS:000243377200046
公开日期2013-10-15
版本出版稿
源URL[http://ir.ipe.ac.cn/handle/122111/3285]  
专题过程工程研究所_研究所(批量导入)
作者单位1.Tsing Hua Univ, State Key Lab New Ceram & Fine Proc, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
2.Tsing Hua Univ, Dept Elect Engn, Beijing 100084, Peoples R China
3.Chinese Acad Sci, Inst Proc Engn, Beijing 100080, Peoples R China
推荐引用方式
GB/T 7714
Cai, Jingnan,Lin, Yuan-Hua,Li, Ming,et al. Sintering temperature dependence of grain boundary resistivity in a rare-earth-doped ZnO varistor[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY,2007,90(1):291-294.
APA Cai, Jingnan,Lin, Yuan-Hua,Li, Ming,Nan, Ce-Wen,He, Jinliang,&Yuan, Fangli.(2007).Sintering temperature dependence of grain boundary resistivity in a rare-earth-doped ZnO varistor.JOURNAL OF THE AMERICAN CERAMIC SOCIETY,90(1),291-294.
MLA Cai, Jingnan,et al."Sintering temperature dependence of grain boundary resistivity in a rare-earth-doped ZnO varistor".JOURNAL OF THE AMERICAN CERAMIC SOCIETY 90.1(2007):291-294.

入库方式: OAI收割

来源:过程工程研究所

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