Study of Ni/Al/Au ohmic contacts to p-Type 4H-SiC applied in 600 degrees C environment
文献类型：期刊论文
| 作者 | Lei, Cheng3; Li, Qiang3; Liang, Ting3; Liu, RuiFang1; Li, YongWei4; Zhou, XingJian3; Jia, Pinggang3; Ghaffar, Abdul2; Xiong, JiJun3 |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2022-08-15 |
| 卷号 | 592期号:--页码:- |
| 关键词 | Ohmic contact p-type 4H-SiC Specific contact resistance |
| ISSN号 | 0022-0248 |
| 英文摘要 | This paper studied the ohmic contact of domestic p-type 4H-SiC epitaxial materials. The Ni/Al/Au-based metal system is annealed experimentally at different metal layers, thicknesses, and different temperatures. The results verify that the ohmic contact could be formed with a specific contact resistivity of 4.09 x 10(-4) Omega.cm(2) by annealing Ni/Al/Au (30/300/50 nm) scheme for 5 min in a vacuum environment at 850 degrees C. The XRD results show that the main phases formed after annealing of p-type 4H-SiC are Ni2Si and Al3C4, and the formation of these phases is the main reason for the formation of ohmic contacts. In-situ tests were performed in a 600 degrees C environment to check the applicability in a high-temperature environment. The sheet resistance exhibited a decreasing trend and then increasing, which is caused by the change of temperature of carriers. The performance showed that the metal system could be applied to 600 degrees C environment. The results lay a foundation for further developing power electronic devices based on 4H-SiC material and critical technologies of MEMS high-temperature pressure sensors. |
| 学科主题 | Crystallography ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000808000000006 |
| 出版者 | ELSEVIER |
| 源URL | [http://119.78.100.198/handle/2S6PX9GI/35366]  |
| 专题 | 中科院武汉岩土力学所 |
| 作者单位 | 1.State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096, China 2.State Key Laboratory of Geomechanics and Geotechnical Engineering, Institute of Rock and Soil Mechanics, Chinese Academy of Sciences, Wuhan 430071, China 3.North University of China, State Key Laboratory of Dynamic Measurement Technology, Taiyuan 030051, China 4.Department of Automation, Taiyuan Institute of Technology, Taiyuan 030051, China |
| 推荐引用方式 GB/T 7714 | Lei, Cheng,Li, Qiang,Liang, Ting,et al. Study of Ni/Al/Au ohmic contacts to p-Type 4H-SiC applied in 600 degrees C environment[J]. JOURNAL OF CRYSTAL GROWTH,2022,592(--):-. |
| APA | Lei, Cheng.,Li, Qiang.,Liang, Ting.,Liu, RuiFang.,Li, YongWei.,...&Xiong, JiJun.(2022).Study of Ni/Al/Au ohmic contacts to p-Type 4H-SiC applied in 600 degrees C environment.JOURNAL OF CRYSTAL GROWTH,592(--),-. |
| MLA | Lei, Cheng,et al."Study of Ni/Al/Au ohmic contacts to p-Type 4H-SiC applied in 600 degrees C environment".JOURNAL OF CRYSTAL GROWTH 592.--(2022):-. |
入库方式： OAI收割
来源：武汉岩土力学研究所
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