Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs
文献类型：期刊论文
| 作者 | Yu, Cheng-hao3; Guo, Hao-min3; Liu, Yan3; Wu, Xiao-dong3; Zhang, Li-long3; Tan, Xin3; Han, Yun-cheng2; Ren, Lei1,2 |
| 刊名 | MICROELECTRONICS RELIABILITY
 |
| 出版日期 | 2023-10-01 |
| 卷号 | 149 |
| ISSN号 | 0026-2714 |
| 关键词 | Depletion-mode Single-event burnout (SEB) Single-event gate rupture |
| DOI | 10.1016/j.microrel.2023.115227 |
| 通讯作者 | Guo, Hao-min(haomin.guo@hdu.edu.cn) ; Liu, Yan(ly0109@hdu.edu.cn) |
| 英文摘要 | This paper presents the 2-D numerical simulation results of the heavy-ion induced single-event burnout (SEB) and single event gate rupture (SEGR) in the depletion-mode gallium-oxide (Ga2O3) field-plated metal-oxide-semiconductor field-effect transistors (FP-MOSFETs). The employed simulation physics models and material parameters were validated by the basic electrical characteristics in experiments. The SEB sensitive region was proven to be from the gate edge to the drain edge of the structure. The SEB failure could result from the large number of mobile holes that diffused into the strong electric field to form a very large joule heat power to induce thermal failure. Meanwhile, the SEGR sensitive region overlapped with that of the SEB. The accumulated at the gate channel interface could produce a high-density hole pool that formed a large positive potential to induce an SEGR. Based on the simulations, a catastrophic SEB was triggered at a drain voltage of around 350 V, which was 46.4 % of breakdown voltage. Besides, a severe leakage current degradation could be estimated at about 175 V. However, for the SEGR performance, an SEGR could be triggered even at 0 V. Finally, the influences of the field plate extension length on SEB and SEGR were investigated that the SEB sensitive region and maximum electric field during SEGR could be both improved. |
| WOS关键词 | PLANAR ; SEGR |
| 资助项目 | National Natural Science Foundation of China[61904044] ; Anhui Provincial Key Research and Development Program[202104g0102007] |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Physics |
| 语种 | 英语 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| WOS记录号 | WOS:001076074900001 |
| 资助机构 | National Natural Science Foundation of China ; Anhui Provincial Key Research and Development Program |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/132516]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Guo, Hao-min; Liu, Yan |
| 作者单位 | 1.Univ Sci & Technol China, Hefei 230026, Peoples R China 2.Chinese Acad Sci, Hefei Inst Phys Sci, Hefei 230031, Anhui, Peoples R China 3.Hangzhou Dianzi Univ, Key Lab RF Circuits & Syst, Minist Educ, Hangzhou 310018, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yu, Cheng-hao,Guo, Hao-min,Liu, Yan,et al. Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs[J]. MICROELECTRONICS RELIABILITY,2023,149. |
| APA | Yu, Cheng-hao.,Guo, Hao-min.,Liu, Yan.,Wu, Xiao-dong.,Zhang, Li-long.,...&Ren, Lei.(2023).Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs.MICROELECTRONICS RELIABILITY,149. |
| MLA | Yu, Cheng-hao,et al."Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs".MICROELECTRONICS RELIABILITY 149(2023). |
入库方式： OAI收割
来源：合肥物质科学研究院
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