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Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β-Ga2O3 power diodes

文献类型：期刊论文

作者Liu, Jinyang2; Han, Zhao2; Ren, Lei2; Yang, Xiao2; Xu, Guangwei2; Hao, Weibing2; Zhao, Xiaolong2; Yang, Shu2; Lu, Di2; Han, Yuncheng1
刊名APPLIED PHYSICS LETTERS
出版日期2023-09-11
卷号123
ISSN号0003-6951
DOI10.1063/5.0161934
通讯作者Xu, Guangwei(xugw@ustc.edu.cn) ; Long, Shibing(shibinglong@ustc.edu.cn)
英文摘要Beta phase gallium oxide (beta-Ga2O3) is emerging as a promising material for space applications due to its unique properties and potential high performance in extreme environments. In this work, we systematically study the impact of beta-Ga2O3 Schottky barrier diodes (SBDs) under a high fluence neutron irradiation to explore the degradation mechanism of the devices. After irradiated by neutrons with an average energy of 1-2 MeV and a dose rate of 1.3 x 10(12) cm(-2) s(-1), SBDs with a homoepitaxial layer suffered serious performance degradation. The main manifestation of this degradation was a substantial increase in on-resistance, which rose from 3.9 to 3.5 x 10(8) m Omega center dot cm(2) under the aforementioned irradiation conditions. The appearance of amorphous/polycrystalline striped lattice damage in the epitaxial layer as well as the presence of deep-level defects caused by oxygen vacancies are factors related to this phenomenon. The simulation revealed that the capture reaction of neutrons and Ga elements is the primary cause of neutron irradiation. This reaction generates high-energy beta-particles (beta-particles) resulting in the formation of defects. This paper reveals the degradation mechanism of beta-Ga2O3 SBDs under neutron irradiation and provides a possible design roadmap for radiation-resistant beta-Ga2O3 power devices. Moreover, a high-temperature oxygen annealing process was implemented, which proved to be in restoring the device performance.
WOS关键词SCHOTTKY-BARRIER DIODE ; DEEP-LEVEL DEFECTS ; RADIATION-DAMAGE ; ACCEPTOR ; BANDGAP ; MOSFET ; TRAPS
资助项目Fundamental Research Plan[JCKY2020110B010] ; National Natural Science Foundation of China[61925110] ; National Natural Science Foundation of China[62234007] ; National Natural Science Foundation of China[U20A20207] ; National Natural Science Foundation of China[62004184] ; National Natural Science Foundation of China[62004186] ; Key-Area Research and Development Program of Guangdong Province[2020B010174002] ; University of Science and Technology of China (USTC)[YD2100002009] ; University of Science and Technology of China (USTC)[YD2100002010] ; Collaborative Innovation Program of Hefei Science Center, Chinese Academy of Sciences[2022HSC-CIP024] ; Opening Project of and the Key Laboratory of Nanodevices and Applications in Suzhou Institute of Nano-Tech and Nano-Bionics of CAS
WOS研究方向Physics
语种英语
出版者AIP Publishing
WOS记录号WOS:001067700900013
资助机构Fundamental Research Plan ; National Natural Science Foundation of China ; Key-Area Research and Development Program of Guangdong Province ; University of Science and Technology of China (USTC) ; Collaborative Innovation Program of Hefei Science Center, Chinese Academy of Sciences ; Opening Project of and the Key Laboratory of Nanodevices and Applications in Suzhou Institute of Nano-Tech and Nano-Bionics of CAS
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/132534]  
专题中国科学院合肥物质科学研究院
通讯作者Xu, Guangwei; Long, Shibing
作者单位1.Inst Nucl Energy Safety Technol, Hefei 230031, Peoples R China
2.Univ Sci & Technol China, Sch Microelect, Hefei 230026, Peoples R China
推荐引用方式
GB/T 7714		 Liu, Jinyang,Han, Zhao,Ren, Lei,et al. Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β-Ga2O3 power diodes[J]. APPLIED PHYSICS LETTERS,2023,123.
APA Liu, Jinyang.,Han, Zhao.,Ren, Lei.,Yang, Xiao.,Xu, Guangwei.,...&Long, Shibing.(2023).Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β-Ga2O3 power diodes.APPLIED PHYSICS LETTERS,123.
MLA Liu, Jinyang,et al."Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β-Ga2O3 power diodes".APPLIED PHYSICS LETTERS 123(2023).

入库方式： OAI收割

来源：合肥物质科学研究院

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