中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Nondegenerate Integer Quantum Hall Effect from Topological Surface States in Ag2Te Nanoplates

文献类型:期刊论文

作者Leng, Pengliang6,7,8; Qian, Yingcai5; Cao, Xiangyu6,7,8; Joseph, Nesta Benno4; Zhang, Yuda6,7,8; Banerjee, Ayan4; Li, Zihan7,8; Liu, Fengshuo7,8; Jia, Zehao6,7,8; Ai, Linfeng6,7,8
刊名NANO LETTERS
出版日期2023-09-28
卷号23
ISSN号1530-6984
关键词topological insulators quantum Hall effect structure inversion asymmetry monoclinic Ag2Te nanoplates nondegeneratesurface state
DOI10.1021/acs.nanolett.3c02703
通讯作者Xiu, Faxian(Faxian@fudan.edu.cn)
英文摘要The quantum Hall effect is one of the exclusive properties displayed by Dirac Fermions in topological insulators, which propagates along the chiral edge state and gives rise to quantized electron transport. However, the quantum Hall effect formed by the nondegenerate Dirac surface states has been elusive so far. Here, we demonstrate the nondegenerate integer quantum Hall effect from the topological surface states in three-dimensional (3D) topological insulator beta-Ag2Te nanostructures. Surface-state dominant conductance renders quantum Hall conductance plateaus with a step of e(2)/h, along with typical thermopower behaviors of two-dimensional (2D) massless Dirac electrons. The 2D nature of the topological surface states is proven by the electrical and thermal transport responses under tilted magnetic fields. Moreover, the degeneracy of the surface states is removed by structure inversion asymmetry (SIA). The evidenced SIA-induced nondegenerate integer quantum Hall effect in low-symmetry beta-Ag2Te has implications for both fundamental study and the realization of topological magneto-electric effects.
WOS关键词LARGE MAGNETORESISTANCE ; TRANSPORT
资助项目National Natural Science Foundation of China[11934005] ; National Natural Science Foundation of China[52225207] ; National Natural Science Foundation of China[52350001] ; National Natural Science Foundation of China[12122411] ; Shanghai Pilot Program for Basic Research - Fudan University[21TQ1400100] ; Shanghai Pilot Program for Basic Research - Fudan University[21TQ006] ; National Key R&D Program of the MOST of China[2022YFA1602603] ; Scientific Instrument Developing Project of the Chinese Academy of Sciences[YJKYYQ20180059] ; Prime Minister's Research Fellowship (PMRF) ; Indian Institute of Science[SG/ MHRD-19-0001] ; DST-SERB[SRG/2020/000153]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:001074988500001
资助机构National Natural Science Foundation of China ; Shanghai Pilot Program for Basic Research - Fudan University ; National Key R&D Program of the MOST of China ; Scientific Instrument Developing Project of the Chinese Academy of Sciences ; Prime Minister's Research Fellowship (PMRF) ; Indian Institute of Science ; DST-SERB
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/132619]  
专题中国科学院合肥物质科学研究院
通讯作者Xiu, Faxian
作者单位1.Shanghai Res Ctr Quantum Sci, Shanghai 201315, Peoples R China
2.Fudan Univ, Zhangjiang Fudan Int Innovat Ctr, Shanghai 201210, Peoples R China
3.Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China
4.Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, India
5.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China
6.Shanghai Qi Zhi Inst, Shanghai 200232, Peoples R China
7.Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
8.Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
推荐引用方式
GB/T 7714
Leng, Pengliang,Qian, Yingcai,Cao, Xiangyu,et al. Nondegenerate Integer Quantum Hall Effect from Topological Surface States in Ag2Te Nanoplates[J]. NANO LETTERS,2023,23.
APA Leng, Pengliang.,Qian, Yingcai.,Cao, Xiangyu.,Joseph, Nesta Benno.,Zhang, Yuda.,...&Xiu, Faxian.(2023).Nondegenerate Integer Quantum Hall Effect from Topological Surface States in Ag2Te Nanoplates.NANO LETTERS,23.
MLA Leng, Pengliang,et al."Nondegenerate Integer Quantum Hall Effect from Topological Surface States in Ag2Te Nanoplates".NANO LETTERS 23(2023).

入库方式: OAI收割

来源:合肥物质科学研究院

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