Band engineering of valleytronics WSe2-MoS2 heterostructures via stacking form, magnetic moment and thickness
文献类型：期刊论文
| 作者 | Wu, Yanwei5; Zhang, Zongyuan5; Ma, Liang3,4; Liu, Tao5; Hao, Ning2; Lu, Wengang1; Long, Mingsheng5; Shan, Lei5 |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2023-09-01 |
| 卷号 | 32 |
| ISSN号 | 1674-1056 |
| 关键词 | valleytronics thickness stacking magnetic moment |
| DOI | 10.1088/1674-1056/acb761 |
| 通讯作者 | Wu, Yanwei(wywss433@126.com) ; Zhang, Zongyuan(zongyuanzhang@ahu.edu.cn) ; Shan, Lei(lshan@ahu.edu.cn) |
| 英文摘要 | Spin-valley polarization and bandgap regulation are critical in the developing of quantum devices. Here, by employing the density functional theory, we investigate the effects of stacking form, thickness and magnetic moment in the electronic structures of WSe2-MoS2 heterostructures. Calculations show that spin-valley polarization maintains in all situations. Increasing thickness of 2H-MoS2 not only tunes the bandgap but also changes the degeneracy of the conduction band minimums (CBM) at K/K-1 points. Gradual increase of micro magnetic moment tunes the bandgap and raises the valence band maximums (VBM) at Gamma point. In addition, the regulation of band gap by the thickness of 2H-MoS(2 )and introduced magnetic moment depends on the stacking type. Results suggest that WSe2-MoS2 heterostructure supports an ideal platform for valleytronics applications. Our methods also give new ways of optical absorption regulation in spin-valley devices. |
| WOS关键词 | VALLEY POLARIZATION ; CHARGE-TRANSFER ; MONOLAYER ; FERROMAGNETISM ; MOS2 |
| 资助项目 | Project supported by the National Natural Science Foundation of China (Grant Nos. 61975224 and 12104004), the University Synergy Innovation Program of Anhui Province (Grant No. GXXT-2020-050), the Fund of Anhui Provincial Natural Science Foundation (Grant[61975224] ; Project supported by the National Natural Science Foundation of China (Grant Nos. 61975224 and 12104004), the University Synergy Innovation Program of Anhui Province (Grant No. GXXT-2020-050), the Fund of Anhui Provincial Natural Science Foundation (Grant[12104004] ; National Natural Science Foundation of China[GXXT-2020-050] ; University Synergy Innovation Program of Anhui Province[2008085MF206] ; Fund of Anhui Provincial Natural Science Foundation ; Recruitment Program for Leading Talent Team of Anhui Province[SKLA-2021-03] ; State Key Laboratory of Luminescence and Applications[IRKL2022KF03] ; Open Fund of Infrared and Low-Temperature Plasma Key Laboratory of Anhui Province |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| 出版者 | IOP Publishing Ltd |
| WOS记录号 | WOS:001076836100001 |
| 资助机构 | Project supported by the National Natural Science Foundation of China (Grant Nos. 61975224 and 12104004), the University Synergy Innovation Program of Anhui Province (Grant No. GXXT-2020-050), the Fund of Anhui Provincial Natural Science Foundation (Grant ; National Natural Science Foundation of China ; University Synergy Innovation Program of Anhui Province ; Fund of Anhui Provincial Natural Science Foundation ; Recruitment Program for Leading Talent Team of Anhui Province ; State Key Laboratory of Luminescence and Applications ; Open Fund of Infrared and Low-Temperature Plasma Key Laboratory of Anhui Province |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/132622]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Wu, Yanwei; Zhang, Zongyuan; Shan, Lei |
| 作者单位 | 1.Chinese Acad Sci, Inst Phys, Beijing Natl Ctr Condensed Matter Phys, Beijing Key Lab Nanomat & Nanodevices, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme C, High Magnet Field Lab, Hefei 230031, Peoples R China 3.Yanshan Univ, Sch Sci, Key Lab Microstruct Mat Phys Hebei Prov, Qinhuangdao 066004, Peoples R China 4.Yanshan Univ, Sch Sci, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China 5.Anhui Univ, Inst Phys Sci & Informat Technol, Informat Mat & Intelligent Sensing Lab Anhui Prov, Key Lab Struct & Funct Regulat Hybrid Mat,Minist E, Hefei 230601, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu, Yanwei,Zhang, Zongyuan,Ma, Liang,et al. Band engineering of valleytronics WSe2-MoS2 heterostructures via stacking form, magnetic moment and thickness[J]. CHINESE PHYSICS B,2023,32. |
| APA | Wu, Yanwei.,Zhang, Zongyuan.,Ma, Liang.,Liu, Tao.,Hao, Ning.,...&Shan, Lei.(2023).Band engineering of valleytronics WSe2-MoS2 heterostructures via stacking form, magnetic moment and thickness.CHINESE PHYSICS B,32. |
| MLA | Wu, Yanwei,et al."Band engineering of valleytronics WSe2-MoS2 heterostructures via stacking form, magnetic moment and thickness".CHINESE PHYSICS B 32(2023). |
入库方式： OAI收割
来源：合肥物质科学研究院
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