The interface trap analysis of AlGaN/GaN high electron mobility transistors with temperature based on conductance method
文献类型：期刊论文
| 作者 | Liang, Yongfeng; Zhang, Heqiu; Chen, Huanhuan; Xing, He; Cai, Tao; Ye, Yufan; Liang, Hongwei; Xia, Xiaochuan; Guo, Wengping; Xu, Nanfa |
| 刊名 | Journal of Physics: Conference Series
 |
| 出版日期 | 2022 |
| 卷号 | 2248期号:1页码:12016 |
| ISSN号 | 17426588 |
| DOI | 10.1088/1742-6596/2248/1/012016 |
| 文献子类 | Article |
| 英文摘要 | In this paper, the characteristics of AlGaN/GaN high electron mobility transistors were tested and analyzed at high temperature. The experimental temperature range was 25∼500°C. Frequency-dependent capacitance and conductance were adopted to investigate high temperature characteristics of interface trap. Results show that there is a kind of trap at the device interface. The trap density and time constant are (8.41×1010∼1.40×1011)eV-1cm2/(0.398∼0.636)μS and (1..03×1011∼1.15×1011)eV-1cm2/(0.455∼0.532)μS at different voltages and temperatures. With the increase of temperature, the trap density and time constant increase. High density interface traps are one of the reasons why device characteristics deteriorate with increasing temperature. © Published under licence by IOP Publishing Ltd. |
| 会议地点 | Virtual, Online |
| 电子版国际标准刊号 | 17426596 |
| 会议日期 | February 25, 2022 - February 27, 2022 |
| 语种 | 英语 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/299777]  |
| 专题 | 高能物理研究所_粒子天体物理中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Liang, Yongfeng,Zhang, Heqiu,Chen, Huanhuan,et al. The interface trap analysis of AlGaN/GaN high electron mobility transistors with temperature based on conductance method[J]. Journal of Physics: Conference Series,2022,2248(1):12016. |
| APA | Liang, Yongfeng.,Zhang, Heqiu.,Chen, Huanhuan.,Xing, He.,Cai, Tao.,...&Huang, Huishi.(2022).The interface trap analysis of AlGaN/GaN high electron mobility transistors with temperature based on conductance method.Journal of Physics: Conference Series,2248(1),12016. |
| MLA | Liang, Yongfeng,et al."The interface trap analysis of AlGaN/GaN high electron mobility transistors with temperature based on conductance method".Journal of Physics: Conference Series 2248.1(2022):12016. |
入库方式： OAI收割
来源：高能物理研究所
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