Defect Emission and Its Dipole Orientation in Layered Ternary Znln2S4 Semiconductor
文献类型：期刊论文
| 作者 | Wang, Rui8; Liu, Quan7; Dai, Sheng6; Liu, Chao-Ming5,8; Liu, Yue8; Sun, Zhao-Yuan8; Li, Hui4; Zhang, Chang-Jin3 ; Wang, Han6; Xu, Cheng-Yan2
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| 刊名 | SMALL
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| 出版日期 | 2023-10-05 |
| ISSN号 | 1613-6810 |
| 关键词 | back focal plane imaging defect dipole orientation photoluminescence Znln(2)S(4) |
| DOI | 10.1002/smll.202305658 |
| 通讯作者 | Wang, Han(wanghan3@shanghaitech.edu.cn) ; Shao, Wen-Zhu(wzshao@hit.edu.cn) ; Zhang, Dai(dai.zhang@uni-tuebingen.de) ; Li, Yang(liyang2018@hit.edu.cn) |
| 英文摘要 | Defect engineering is promising to tailor the physical properties of 2D semiconductors for function-oriented electronics and optoelectronics. Compared with the extensively studied 2D binary materials, the origin of defects and their influence on physical properties of 2D ternary semiconductors are not clarified. Here, the effect of defects on the electronic structure and optical properties of few-layer hexagonal Znln(2)S(4) is thoroughly studied via versatile spectroscopic tools in combination with theoretical calculations. It is demonstrated that the Zn-In antistructural defects induce the formation of a series of donor and acceptor energy levels and sulfur vacancies induce donor energy levels, leading to rich recombination paths for defect emission and extrinsic absorption. Impressively, the emission of donor-acceptor pair in Znln(2)S(4 )can be significantly tailored by electrostatic gating due to efficient tunability of Fermi level (E-f). Furthermore, the layer-dependent dipole orientation of defect emission in Znln(2)S(4) is directly revealed by back focal plane imagining, where it presents obviously in-plane dipole orientation within a dozen-layer thickness of Znln(2)S(4). These unique features of defects in Znln(2)S(4) including extrinsic absorption, rich recombination paths, gate tunability, and in-plane dipole orientation are definitely a benefit to the advanced orientation-functional optoelectronic applications. |
| WOS关键词 | LUMINESCENT EXCITONS ; ATOMIC DEFECTS ; ZNIN2S4 |
| 资助项目 | National Key Research and Development Program of China[2019YFA0705201] ; National Natural Science Foundation of China[52272146] ; National Natural Science Foundation of China[51902069] ; German Research Foundation[ZH 279/13-1] ; German Research Foundation[ME 1600/21-1] ; Alexander von Humboldt Foundation ; Eberhard Karls University of Tuebingen ; Double First-Class Initiative Fund of the ShanghaiTech University |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| WOS记录号 | WOS:001080994400001 |
| 资助机构 | National Key Research and Development Program of China ; National Natural Science Foundation of China ; German Research Foundation ; Alexander von Humboldt Foundation ; Eberhard Karls University of Tuebingen ; Double First-Class Initiative Fund of the ShanghaiTech University |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/133532]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Wang, Han; Shao, Wen-Zhu; Zhang, Dai; Li, Yang |
| 作者单位 | 1.Harbin Inst Technol, Key Lab Microsyst & Microstruct Mfg, MOE, Harbin 150080, Peoples R China 2.Harbin Inst Technol Shenzhen, Sch Mat Sci & Engn, Sauvage Lab Smart Mat, Shenzhen 518055, Peoples R China 3.Chinese Acad Sci, Hefei Inst Phys Sci, High Magnet Field Lab Anhui Prov, Hefei 230031, Peoples R China 4.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China 5.Harbin Inst Technol, Lab Space Environm & Phys Sci, Harbin 150001, Peoples R China 6.ShanghaiTech Univ, Ctr Transformat Sci, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 7.Eberhard Karls Univ Tubingen, Inst Phys & Theoret Chem, D-72076 Tubingen, Germany 8.Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Rui,Liu, Quan,Dai, Sheng,et al. Defect Emission and Its Dipole Orientation in Layered Ternary Znln2S4 Semiconductor[J]. SMALL,2023. |
| APA | Wang, Rui.,Liu, Quan.,Dai, Sheng.,Liu, Chao-Ming.,Liu, Yue.,...&Zhen, Liang.(2023).Defect Emission and Its Dipole Orientation in Layered Ternary Znln2S4 Semiconductor.SMALL. |
| MLA | Wang, Rui,et al."Defect Emission and Its Dipole Orientation in Layered Ternary Znln2S4 Semiconductor".SMALL (2023). |
入库方式： OAI收割
来源：合肥物质科学研究院
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