An Energy-Efficient Computing-in-Memory (CiM) Scheme Using Field-Free Spin-Orbit Torque (SOT) Magnetic RAMs
文献类型：期刊论文
| 作者 | Wu, Bi1,5,6; Zhu, Haonan5,6; Reis, Dayane7; Wang, Zhaohao2; Wang, Ying4; Chen, Ke5,6; Liu, Weiqiang5,6; Lombardi, Fabrizio3; Hu, Xiaobo Sharon1 |
| 刊名 | IEEE TRANSACTIONS ON EMERGING TOPICS IN COMPUTING
 |
| 出版日期 | 2023-04-01 |
| 卷号 | 11期号:2页码:331-342 |
| 关键词 | Random access memory Magnetic tunneling Switches Torque Microprocessors Adders Simulation Computing-in-memory full adder magnetic random access memory spin orbit torque (SOT) XNOR/XOR |
| ISSN号 | 2168-6750 |
| DOI | 10.1109/TETC.2023.3237541 |
| 英文摘要 | The separation of memory and computing units in the von Neumann architecture leads to undesirable energy consumption due to data movement and insufficient memory bandwidth. Energy-efficient in-memory computing platforms have the potential to address such issues. Due to its non-volatility and advantageous features over CMOS (such as low power, near-zero leakage current and high integration density), spin-based devices have been advocated for in-memory computing. This paper proposes a field-free Spin Orbit Torque (FF-SOT) MRAM based computing-in-memory (CiM) scheme that realizes XNOR/XOR logic and a cascading adder. This novel FF-SOT-CiM design does not require expensive peripheral circuits for computation while using the same memory cell design as a SOT-MRAM. Furthermore, FF-SOT-CiM does not require additional write cycles to save the result of its computations in the memory. The design offers higher write speed and; lower operating energy compared to CiM schemes based on other technologies; it also alleviates the source degeneration effect by leveraging an advanced switching mechanism. Extensive simulation results show that the proposed FF-SOT-CiM achieves up to 3.1x (2.6x) latency (energy) reduction compared to SRAM-based CiM, with negligible hardware overhead when performing in-memory XOR. ADD operations; the proposed FF-SOT-CiM can be to 5.0X and 1.5X faster and 3.4X and 1.1X more energy efficient than existing STT-based and FeFET-based schemes, respectively. |
| 资助项目 | Natural Science Foundation of Jiangsu Province[BK20210286] ; National Natural Science Foundation of China[62201254] ; National Natural Science Foundation of China[62022041] ; Fundamental Research Funds for the Central Universities[NP2022103] |
| WOS研究方向 | Computer Science ; Telecommunications |
| 语种 | 英语 |
| WOS记录号 | WOS:001004277000006 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 源URL | [http://119.78.100.204/handle/2XEOYT63/21233]  |
| 专题 | 中国科学院计算技术研究所期刊论文_英文 |
| 通讯作者 | Wu, Bi; Liu, Weiqiang |
| 作者单位 | 1.Univ Notre Dame, Dept Comp Sci & Engn, Notre Dame, IN 46656 USA 2.Beihang Univ, Fert Beijing Res Inst, Beijing Adv Innovat Ctr Big Data & Brain Comp, Sch Integrated Circuit Sci & Engn, Beijing 100191, Peoples R China 3.Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA 4.Chinese Acad Sci, Inst Comp Technol, Beijing 100190, Peoples R China 5.Nanjing Univ Aeronaut & Astronaut, Coll Elect & Informat Engn, Nanjing 211106, Peoples R China 6.Minist Ind & Informat Technol, Key Lab Aerosp Integrated Circuits & Microsyst, Nanjing 211106, Peoples R China 7.Univ S Florida, Dept Comp Sci & Engn, Tampa, FL 33620 USA |
| 推荐引用方式 GB/T 7714 | Wu, Bi,Zhu, Haonan,Reis, Dayane,et al. An Energy-Efficient Computing-in-Memory (CiM) Scheme Using Field-Free Spin-Orbit Torque (SOT) Magnetic RAMs[J]. IEEE TRANSACTIONS ON EMERGING TOPICS IN COMPUTING,2023,11(2):331-342. |
| APA | Wu, Bi.,Zhu, Haonan.,Reis, Dayane.,Wang, Zhaohao.,Wang, Ying.,...&Hu, Xiaobo Sharon.(2023).An Energy-Efficient Computing-in-Memory (CiM) Scheme Using Field-Free Spin-Orbit Torque (SOT) Magnetic RAMs.IEEE TRANSACTIONS ON EMERGING TOPICS IN COMPUTING,11(2),331-342. |
| MLA | Wu, Bi,et al."An Energy-Efficient Computing-in-Memory (CiM) Scheme Using Field-Free Spin-Orbit Torque (SOT) Magnetic RAMs".IEEE TRANSACTIONS ON EMERGING TOPICS IN COMPUTING 11.2(2023):331-342. |
入库方式： OAI收割
来源：计算技术研究所
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