Sn-filled Si nanotubes fabricated by the facile DC arc discharge method and their photoluminescence property
文献类型：期刊论文
| 作者 | Chen JT(陈江涛)
|
| 刊名 | Journal of Crystal Growth
 |
| 出版日期 | 2008 |
| 卷号 | 310页码:4412-4416 |
| 关键词 | Nanostructures Nucleation DC arc discharge method Semiconducting silicon |
| ISSN号 | 0022-0248 |
| 通讯作者 | 阎鹏勋 |
| 中文摘要 | High-yield preparation of polycrystalline Si nanotubes (SiNTs) filled with single-crystal Sn was achieved by the DC arc discharge method. The Sn/Si nanocables were identified by X-ray diffraction (XRD), fieldemission scanning electron microscope (FE-SEM), transmission electron microscope (TEM) and photoluminescence (PL). The results show that the Sn/Si coaxial nanocables have homogeneous diameters of about 20–30nm and lengths ranging from several ten to several hundred nanometers. Most of them are composed of an oval-shaped tip and a tapered hollow body. The possible growth mechanism is vapor–liquid–solid (VLS) model. The PL spectrum shows two characteristic emissions at 491 nm (blue emission) and 572 nm (yellow emission). The origin of luminescence was also discussed. |
| 学科主题 | 材料科学与物理化学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-10-18 |
| 源URL | [http://210.77.64.217/handle/362003/3975]  |
| 专题 | 兰州化学物理研究所_固体润滑国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Chen JT. Sn-filled Si nanotubes fabricated by the facile DC arc discharge method and their photoluminescence property[J]. Journal of Crystal Growth,2008,310:4412-4416. |
| APA | 陈江涛.(2008).Sn-filled Si nanotubes fabricated by the facile DC arc discharge method and their photoluminescence property.Journal of Crystal Growth,310,4412-4416. |
| MLA | 陈江涛."Sn-filled Si nanotubes fabricated by the facile DC arc discharge method and their photoluminescence property".Journal of Crystal Growth 310(2008):4412-4416. |
入库方式： OAI收割
来源：兰州化学物理研究所
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