A low-power memristor based on 2H-MoTe2 nanosheets with synaptic plasticity and arithmetic functions
文献类型：期刊论文
| 作者 | Yu, T.; Zhao, Z.; Jiang, H.; Weng, Z.; Fang, Y.; Liu, C.; Lei, W.; Shafe, S. B.; Mohtar, M. N. |
| 刊名 | MATERIALS TODAY NANO
 |
| 出版日期 | 2022 |
| 卷号 | 19 |
| 源URL | [http://159.226.73.51/handle/332005/21536]  |
| 专题 | 中国科学院南京地理与湖泊研究所 |
| 推荐引用方式 GB/T 7714 | Yu, T.,Zhao, Z.,Jiang, H.,et al. A low-power memristor based on 2H-MoTe2 nanosheets with synaptic plasticity and arithmetic functions[J]. MATERIALS TODAY NANO,2022,19. |
| APA | Yu, T..,Zhao, Z..,Jiang, H..,Weng, Z..,Fang, Y..,...&Mohtar, M. N..(2022).A low-power memristor based on 2H-MoTe2 nanosheets with synaptic plasticity and arithmetic functions.MATERIALS TODAY NANO,19. |
| MLA | Yu, T.,et al."A low-power memristor based on 2H-MoTe2 nanosheets with synaptic plasticity and arithmetic functions".MATERIALS TODAY NANO 19(2022). |
入库方式： OAI收割
来源：南京地理与湖泊研究所
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