Antimony chalcogenides (Sb2S3-xSex), as one of the promising light-absorbing materials in optoelectronic energy storage devices, has attracted widespread attention in recent years. Of particular note, its crystal structure consists of the one-dimensional [Sb4S(Se)6]n ribbons with efficient carrier transport efficiency along the [hk1] direction. In this paper, with the aid of the topological transformation of the layered material Bi2O2S, the SbBiS3-xSex bimetallic alloy with 2D skeleton structure was induced to grow in situ, and the conversion of Sb2S3-xSex preferred orientation from [hk0] to [hk1] was realized. The corresponding results showed that 2D skeleton structure was conducive to the construction of photo traps and the increase of electrochemical specific surface area. In addition, Bi2O2S acted as an electron transport layer (ETL) to further promote the migration of photo-generated carriers. At 1.23 V vs. RHE, the photocurrent density of quasi-two-dimensional Bi2O2S/SbBiS3-xSex nanosheet photoanode was as high as 6.41 mA cm-2, which was 7.5 times that of pure Sb2S3-xSex, and the peak value of IPCE could reach 40.93%. This work undoubtedly opens up a new avenue for the designing high-efficiency antimony chalcogenides photoelectrodes.