中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Crystal Growth by Unidirectional Method - A Generalized View on the Crystalline Perfection of the Uni-Indexed, Bi-Indexed, and Tri-Indexed Plane Single Crystals

文献类型:期刊论文

作者Sivakumar Aswathppa; Sahaya Jude Dhas Sathiyadhas; V. Muthuvel; Lidong Dai; Martin Britto Dhas Sathiyadhas Amalapushpam
刊名Crystal Research and Technology
出版日期2023
卷号58期号:12
DOIhttps://doi.org/10.1002/crat.202300193
URL标识查看原文
语种英语
源URL[http://ir.gyig.ac.cn/handle/42920512-1/14480]  
专题地球化学研究所_地球内部物质高温高压实验室
地球深部物质与流体作用地球化学研究室
作者单位1.Key Laboratory of High-Temperature and High-Pressure Study of the Earth’s Interior, Institute of Geochemistry Chinese Academy of Sciences Guiyang, Guizhou 550081, China
2.Department of Physics Kings Engineering College Sriperumbudur, Chennai, Tamilnadu 602 117, India
3.Department of Physics, School of Foundation Science Kumaraguru College of Technology Coimbatore, Tamilnadu 641 049, India
4.Shock Wave Research Laboratory, Department of Physics, Abdul Kalam Research Center Sacred Heart College Tirupattur, Vellore, Tamil Nadu 635 601, India
推荐引用方式
GB/T 7714
Sivakumar Aswathppa,Sahaya Jude Dhas Sathiyadhas,V. Muthuvel,et al. Crystal Growth by Unidirectional Method - A Generalized View on the Crystalline Perfection of the Uni-Indexed, Bi-Indexed, and Tri-Indexed Plane Single Crystals[J]. Crystal Research and Technology,2023,58(12).
APA Sivakumar Aswathppa,Sahaya Jude Dhas Sathiyadhas,V. Muthuvel,Lidong Dai,&Martin Britto Dhas Sathiyadhas Amalapushpam.(2023).Crystal Growth by Unidirectional Method - A Generalized View on the Crystalline Perfection of the Uni-Indexed, Bi-Indexed, and Tri-Indexed Plane Single Crystals.Crystal Research and Technology,58(12).
MLA Sivakumar Aswathppa,et al."Crystal Growth by Unidirectional Method - A Generalized View on the Crystalline Perfection of the Uni-Indexed, Bi-Indexed, and Tri-Indexed Plane Single Crystals".Crystal Research and Technology 58.12(2023).

入库方式: OAI收割

来源:地球化学研究所

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