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Electronic signal for mechanical failure in two-dimensional g-SiC

文献类型：期刊论文

作者Li, Jing4; Shi, Tan4; Lu, Chenyang4; Peng Q(彭庆)1,2,3
刊名SEMICONDUCTOR SCIENCE AND TECHNOLOGY
出版日期2024-06-01
卷号39期号:6页码:5
关键词instability mechanical properties electronic properties two-dimensional SiC first-principles calculations mechanical failure
ISSN号0268-1242
DOI10.1088/1361-6641/ad40c7
通讯作者Shi, Tan(tan.shi0122@xjtu.edu.cn) ; Peng, Qing(pengqing@imech.ac.cn)
英文摘要It is non-trivial to identify mechanical failure using first-principles calculations as only long-wave phonons are used in these models due to size limitations. Here, we propose a new criterion to predict the mechanical failure by electronic bandgap closure in graphene-like two-dimensional silicon carbide (g-SiC) monolayer. The electronic bandgap decreases with strain and closes beyond the ultimate strain. This mechano-electronic coupling suggests that the onset of the zero bandgap and the correlation between electronic bandgap and ultimate strain could be used to predict the ideal mechanical failure of g-SiC monolayers.
分类号Q3
WOS关键词SILICON-CARBIDE ; AB-INITIO ; MONOLAYER ; GRAPHENE ; GEC
资助项目National Natural Science Foundation of Chinahttp://dx.doi.org/10.13039/501100001809[12105219] ; National Natural Science Foundation of Chinahttp://dx.doi.org/10.13039/501100001809[12272378] ; National Natural Science Foundation of China[2020B0909010003] ; High-level Innovation Research Institute Program of Guangdong Province[E1Z1011001] ; Chinese Academy of Sciences
WOS研究方向Engineering ; Materials Science ; Physics
语种英语
WOS记录号WOS:001214209500001
资助机构National Natural Science Foundation of Chinahttp://dx.doi.org/10.13039/501100001809 ; National Natural Science Foundation of China ; High-level Innovation Research Institute Program of Guangdong Province ; Chinese Academy of Sciences
其他责任者Shi, Tan ; Peng, Qing
源URL[http://dspace.imech.ac.cn/handle/311007/95082]  
专题力学研究所_非线性力学国家重点实验室
作者单位1.Guangdong Aerosp Res Acad, Guangzhou 511458, Peoples R China
2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China;
3.Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100190, Peoples R China;
4.Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, Xian 710049, Peoples R China;
推荐引用方式
GB/T 7714		 Li, Jing,Shi, Tan,Lu, Chenyang,et al. Electronic signal for mechanical failure in two-dimensional g-SiC[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2024,39(6):5.
APA Li, Jing,Shi, Tan,Lu, Chenyang,&彭庆.(2024).Electronic signal for mechanical failure in two-dimensional g-SiC.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,39(6),5.
MLA Li, Jing,et al."Electronic signal for mechanical failure in two-dimensional g-SiC".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 39.6(2024):5.

入库方式： OAI收割

来源：力学研究所

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