Effect of Sb composition on the band alignment of InAs/GaAsSb quantum dots
文献类型：期刊论文
| 作者 | Lu, Guangze; Lv, Zunren; Zhang, Zhongkai; Yang, Xiaoguang; Yang, Tao |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2021 |
| 卷号 | 30期号:1页码:17802 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31459]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Lu, Guangze; Lv, Zunren; Zhang, Zhongkai; Yang, Xiaoguang; Yang, Tao. Effect of Sb composition on the band alignment of InAs/GaAsSb quantum dots[J]. CHINESE PHYSICS B,2021,30(1):17802. |
| APA | Lu, Guangze; Lv, Zunren; Zhang, Zhongkai; Yang, Xiaoguang; Yang, Tao.(2021).Effect of Sb composition on the band alignment of InAs/GaAsSb quantum dots.CHINESE PHYSICS B,30(1),17802. |
| MLA | Lu, Guangze; Lv, Zunren; Zhang, Zhongkai; Yang, Xiaoguang; Yang, Tao."Effect of Sb composition on the band alignment of InAs/GaAsSb quantum dots".CHINESE PHYSICS B 30.1(2021):17802. |
入库方式： OAI收割
来源：半导体研究所
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