Abnormal increase of 2DEG density in AlGaN/GaN HEMT grown on free-standing GaN substrate
文献类型：期刊论文
| 作者 | Chu, Jiayan; Wang, Quan; Feng, Chun; Jiang, Lijuan; Li, Wei; Liu, Hongxin; Wang, Qian; Xiao, Hongling; Wang, Xiaoliang |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2021 |
| 卷号 | 60期号:3页码:35506 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31471]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Chu, Jiayan; Wang, Quan; Feng, Chun; Jiang, Lijuan; Li, Wei; Liu, Hongxin; Wang, Qian; Xiao, Hongling; Wang, Xiaoliang. Abnormal increase of 2DEG density in AlGaN/GaN HEMT grown on free-standing GaN substrate[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2021,60(3):35506. |
| APA | Chu, Jiayan; Wang, Quan; Feng, Chun; Jiang, Lijuan; Li, Wei; Liu, Hongxin; Wang, Qian; Xiao, Hongling; Wang, Xiaoliang.(2021).Abnormal increase of 2DEG density in AlGaN/GaN HEMT grown on free-standing GaN substrate.JAPANESE JOURNAL OF APPLIED PHYSICS,60(3),35506. |
| MLA | Chu, Jiayan; Wang, Quan; Feng, Chun; Jiang, Lijuan; Li, Wei; Liu, Hongxin; Wang, Qian; Xiao, Hongling; Wang, Xiaoliang."Abnormal increase of 2DEG density in AlGaN/GaN HEMT grown on free-standing GaN substrate".JAPANESE JOURNAL OF APPLIED PHYSICS 60.3(2021):35506. |
入库方式： OAI收割
来源：半导体研究所
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