Novel III-V semiconductor epitaxy for optoelectronic devices through two-dimensional materials
文献类型：期刊论文
| 作者 | Zhao, Chao; Li, Zhaonan; Tang, Tianyi; Sun, Jiaqian; Zhan, Wenkang; Xu, Bo; Sun, Huajun; Jiang, Hui; Liu, Kong; Qu, Shengchun; Wang, Zhijie; Wang, Zhanguo |
| 刊名 | PROGRESS IN QUANTUM ELECTRONICS
 |
| 出版日期 | 2021 |
| 卷号 | 76页码:100313 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31487]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhao, Chao; Li, Zhaonan; Tang, Tianyi; Sun, Jiaqian; Zhan, Wenkang; Xu, Bo; Sun, Huajun; Jiang, Hui; Liu, Kong; Qu, Shengchun; Wang, Zhijie; Wang, Zhanguo. Novel III-V semiconductor epitaxy for optoelectronic devices through two-dimensional materials[J]. PROGRESS IN QUANTUM ELECTRONICS,2021,76:100313. |
| APA | Zhao, Chao; Li, Zhaonan; Tang, Tianyi; Sun, Jiaqian; Zhan, Wenkang; Xu, Bo; Sun, Huajun; Jiang, Hui; Liu, Kong; Qu, Shengchun; Wang, Zhijie; Wang, Zhanguo.(2021).Novel III-V semiconductor epitaxy for optoelectronic devices through two-dimensional materials.PROGRESS IN QUANTUM ELECTRONICS,76,100313. |
| MLA | Zhao, Chao; Li, Zhaonan; Tang, Tianyi; Sun, Jiaqian; Zhan, Wenkang; Xu, Bo; Sun, Huajun; Jiang, Hui; Liu, Kong; Qu, Shengchun; Wang, Zhijie; Wang, Zhanguo."Novel III-V semiconductor epitaxy for optoelectronic devices through two-dimensional materials".PROGRESS IN QUANTUM ELECTRONICS 76(2021):100313. |
入库方式： OAI收割
来源：半导体研究所
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