In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching
文献类型：期刊论文
| 作者 | Soopy, Abdul Kareem K.; Li, Zhaonan; Tang, Tianyi; Sun, Jiaqian; Xu, Bo; Zhao, Chao; Najar, Adel |
| 刊名 | NANOMATERIALS
 |
| 出版日期 | 2021 |
| 卷号 | 11期号:1页码:126 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31514]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Soopy, Abdul Kareem K.; Li, Zhaonan; Tang, Tianyi; Sun, Jiaqian; Xu, Bo; Zhao, Chao; Najar, Adel. In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching[J]. NANOMATERIALS,2021,11(1):126. |
| APA | Soopy, Abdul Kareem K.; Li, Zhaonan; Tang, Tianyi; Sun, Jiaqian; Xu, Bo; Zhao, Chao; Najar, Adel.(2021).In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching.NANOMATERIALS,11(1),126. |
| MLA | Soopy, Abdul Kareem K.; Li, Zhaonan; Tang, Tianyi; Sun, Jiaqian; Xu, Bo; Zhao, Chao; Najar, Adel."In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching".NANOMATERIALS 11.1(2021):126. |
入库方式： OAI收割
来源：半导体研究所
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